+86 15815556552Диодный выпрямитель
| Фото | Производитель Часть # | Доступность | Цена | Количество | Техническая | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WNSC2D201200WQSILICON CARBIDE SCHOTTKY DIODE |
3,000 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 845pF @ 1V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 20A | 175°C | 1.8 V @ 20 A | |
|
BYC15-600,127DIODE GEN PURP 500V 15A TO220AC |
303 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 200 µA @ 600 V | 500 V | 15A | 150°C (Max) | 2.9 V @ 15 A | |
|
|
WND45P16WQSTANDARD POWER DIODE |
2,490 | - |
|
Техническая |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 1600 V | 1600 V | 45A | 150°C | 1.4 V @ 45 A | |
|
|
WNSC2D10650DJSILICON CARBIDE SCHOTTKY DIODE |
3,349 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 310pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 10A | 175°C | 1.7 V @ 10 A | |
|
|
BYC30X-600PSQWEEN'S 5TH GENERATION HYPER FAST |
2,830 | - |
|
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 10 µA @ 600 V | 600 V | 30A | 175°C | 2.75 V @ 30 A | ||
|
|
WND60P16WQSTANDARD POWER DIODE |
2,439 | - |
|
Техническая |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 µA @ 1600 V | 1600 V | 60A | -55°C ~ 150°C | 1.12 V @ 60 A | |
|
|
BYV29D-600PJDIODE GEN PURP 600V 9A DPAK |
2,941 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 600 V | 600 V | 9A | 175°C (Max) | 1.3 V @ 8 A | |
|
|
BYC100W-1200PQBYC100W-1200P/TO247-2L/STANDARD |
3,688 | - |
|
Техническая |
Tube | EEPP™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 90 ns | 250 µA @ 1200 V | 1200 V | 100A | 175°C (Max) | 3.3 V @ 100 A |
|
NXPSC206506QDIODE SCHOTTKY 650V 20A TO220AC |
4,558 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 600pF @ 1V, 1MHz | 0 ns | 500 µA @ 650 V | 650 V | 20A | 175°C (Max) | 1.7 V @ 20 A | |
|
|
MUR560JDIODE GEN PURP 600V 5A SMC |
10,810 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 64 ns | 3 µA @ 600 V | 600 V | 5A | 175°C (Max) | 1.35 V @ 5 A | |
|
MUR860JULTRAFAST POWER DIODE |
9,690 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 90 ns | 10 µA @ 600 V | 600 V | 8A | 175°C (Max) | 1.25 V @ 8 A | |
|
|
BYW29E-100,127DIODE GEN PURP 100V 8A TO220AC |
2,832 | - |
|
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 100 V | 100 V | 8A | 150°C (Max) | 1.05 V @ 8 A | ||
|
BYV29X-500,127DIODE GEN PURP 500V 9A TO220FP |
2,838 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 500 V | 500 V | 9A | 150°C (Max) | 1.25 V @ 8 A | |
|
|
BYW29EX-200,127DIODE GEN PURP 200V 8A TO220FP |
2,617 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 200 V | 200 V | 8A | 150°C (Max) | 1.05 V @ 8 A | |
|
|
BYT79-500,127DIODE GEN PURP 500V 14A TO220AC |
2,057 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 500 V | 500 V | 14A | 150°C (Max) | 1.38 V @ 30 A | |
|
|
BYC30X-600P,127DIODE GEN PURP 600V 30A TO220F |
3,780 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 600 V | 600 V | 30A | 175°C (Max) | 1.8 V @ 30 A | |
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|
BYV25G-600,127DIODE GEN PURP 600V 5A I2PAK |
2,764 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 600 V | 600 V | 5A | 150°C (Max) | 1.3 V @ 5 A | |
|
|
BYV10X-600PQDIODE GEN PURP 600V 10A TO220-2 |
3,092 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 10 µA @ 600 V | 600 V | 10A | 175°C (Max) | 2 V @ 10 A | |
|
|
BYV29G-600,127DIODE GEN PURP 600V 9A I2PAK |
2,732 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 600 V | 600 V | 9A | 150°C (Max) | 1.25 V @ 8 A | |
|
|
BYV29-400,127DIODE GEN PURP 400V 9A TO220AC |
3,094 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 400 V | 400 V | 9A | 150°C (Max) | 1.25 V @ 8 A |
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