Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

Диодный выпрямитель

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
MURS160HE3_A/H

MURS160HE3_A/H

DIODE GEN PURP 600V 2A DO214AA

Vishay General Semiconductor - Diodes Division

3,491 -
MURS160HE3_A/H

Техническая

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 75 ns 5 µA @ 600 V 600 V 2A -65°C ~ 175°C 1.25 V @ 1 A
EGF1T-E3/67A

EGF1T-E3/67A

DIODE GEN PURP 1.3KV 1A DO214BA

Vishay General Semiconductor - Diodes Division

2,195 -
EGF1T-E3/67A

Техническая

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 75 ns 5 µA @ 1300 V 1300 V 1A -55°C ~ 150°C 3 V @ 1 A
VS-MBRB1045TRL-M3

VS-MBRB1045TRL-M3

DIODE SCHOTTKY 45V 10A TO263AB

Vishay General Semiconductor - Diodes Division

2,541 -
VS-MBRB1045TRL-M3

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 600pF @ 5V, 1MHz - 100 µA @ 45 V 45 V 10A -65°C ~ 150°C 570 mV @ 10 A
VS-40HFL100S05

VS-40HFL100S05

DIODE GEN PURP 1KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

3,137 -
VS-40HFL100S05

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 100 µA @ 1000 V 1000 V 40A -40°C ~ 125°C 1.95 V @ 40 A
VS-60EPU06-N3

VS-60EPU06-N3

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

3,996 -
VS-60EPU06-N3

Техническая

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 81 ns 50 µA @ 600 V 600 V 60A -55°C ~ 175°C 1.68 V @ 60 A
VS-C4PU3006LHN3

VS-C4PU3006LHN3

DIODE GEN PURP 600V 15A TO247AD

Vishay General Semiconductor - Diodes Division

2,703 -
VS-C4PU3006LHN3

Техническая

Tube Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 15 µA @ 600 V 600 V 15A -55°C ~ 175°C 1.55 V @ 15 A
VS-20ETF02FP-M3

VS-20ETF02FP-M3

DIODE GEN PURP 200V 20A TO220FP

Vishay General Semiconductor - Diodes Division

3,288 -
VS-20ETF02FP-M3

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 160 ns 100 µA @ 200 V 200 V 20A -40°C ~ 150°C 1.67 V @ 60 A
VS-70HFLR100S05

VS-70HFLR100S05

DIODE GEN PURP 1KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

3,501 -
VS-70HFLR100S05

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 100 µA @ 1000 V 1000 V 70A -40°C ~ 125°C 1.85 V @ 219.8 A
VS-30EPU12L-N3

VS-30EPU12L-N3

DIODE GEN PURP 1.2KV 30A TO247AD

Vishay General Semiconductor - Diodes Division

3,085 -
VS-30EPU12L-N3

Техническая

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 220 ns 145 µA @ 1200 V 1200 V 30A -55°C ~ 175°C 2.68 V @ 30 A
VS-20ETF04FP-M3

VS-20ETF04FP-M3

DIODE GEN PURP 400V 20A TO220FP

Vishay General Semiconductor - Diodes Division

3,341 -
VS-20ETF04FP-M3

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 160 ns 100 µA @ 400 V 400 V 20A -40°C ~ 150°C 1.67 V @ 60 A
BYV26B-TAP

BYV26B-TAP

DIODE AVALANCHE 400V 1A SOD57

Vishay General Semiconductor - Diodes Division

3,931 -
BYV26B-TAP

Техническая

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 30 ns 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 2.5 V @ 1 A
UG4D-E3/54

UG4D-E3/54

DIODE GEN PURP 200V 4A DO201AD

Vishay General Semiconductor - Diodes Division

2,316 -
UG4D-E3/54

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 30 ns 5 µA @ 200 V 200 V 4A -55°C ~ 150°C 950 mV @ 4 A
VS-20ETF02STRR-M3

VS-20ETF02STRR-M3

DIODE GEN PURP 200V 20A TO263AB

Vishay General Semiconductor - Diodes Division

2,495 -
VS-20ETF02STRR-M3

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 160 ns 100 µA @ 200 V 200 V 20A -40°C ~ 150°C 1.3 V @ 20 A
V8PM15-M3/H

V8PM15-M3/H

DIODE SCHOTTKY 8A 150V SMPC

Vishay General Semiconductor - Diodes Division

3,434 -
V8PM15-M3/H

Техническая

Tape & Reel (TR),Cut Tape (CT) eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 460pF @ 4V, 1MHz - 150 µA @ 150 V 150 V 8A -40°C ~ 175°C 1.08 V @ 8 A
VS-20ETF06FP-M3

VS-20ETF06FP-M3

DIODE GEN PURP 600V 20A TO220FP

Vishay General Semiconductor - Diodes Division

3,973 -
VS-20ETF06FP-M3

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 160 ns 100 µA @ 600 V 600 V 20A -40°C ~ 150°C 1.67 V @ 60 A
VS-20ETF04STRR-M3

VS-20ETF04STRR-M3

DIODE GEN PURP 400V 20A TO263AB

Vishay General Semiconductor - Diodes Division

3,783 -
VS-20ETF04STRR-M3

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 160 ns 100 µA @ 400 V 400 V 20A -40°C ~ 150°C 1.3 V @ 20 A
SS24HE3_A/H

SS24HE3_A/H

DIODE SCHOTTKY 40V 2A DO214AA

Vishay General Semiconductor - Diodes Division

2,346 -
SS24HE3_A/H

Техническая

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 40 V 40 V 2A -65°C ~ 150°C 500 mV @ 2 A
SS8P3L-M3/86A

SS8P3L-M3/86A

DIODE SCHOTTKY 30V 8A TO277A

Vishay General Semiconductor - Diodes Division

3,367 -
SS8P3L-M3/86A

Техническая

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 330pF @ 4V, 1MHz - 200 µA @ 30 V 30 V 8A -55°C ~ 150°C 570 mV @ 8 A
BYW56-TR

BYW56-TR

DIODE AVALANCHE 1000V 2A SOD57

Vishay General Semiconductor - Diodes Division

2,859 -
BYW56-TR

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 1000 V 1000 V 2A -55°C ~ 175°C 1 V @ 1 A
BYV38-TR

BYV38-TR

DIODE AVALANCHE 1KV 2A SOD57

Vishay General Semiconductor - Diodes Division

2,025 -
BYV38-TR

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole 15pF @ 4V, 1MHz 300 ns 5 µA @ 1000 V 1000 V 2A -55°C ~ 175°C 1.1 V @ 1 A
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