Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

Диодный выпрямитель

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
NSB8KTHE3_B/P

NSB8KTHE3_B/P

DIODE GEN PURP 800V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2,253 -
NSB8KTHE3_B/P

Техническая

Tube Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 55pF @ 4V, 1MHz - 10 µA @ 800 V 800 V 8A -55°C ~ 150°C 1.1 V @ 8 A
SE40PG-M3/86A

SE40PG-M3/86A

DIODE GEN PURP 400V 2.4A TO277A

Vishay General Semiconductor - Diodes Division

2,237 -
SE40PG-M3/86A

Техническая

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 28pF @ 4V, 1MHz 2.2 µs 10 µA @ 400 V 400 V 2.4A (DC) -55°C ~ 175°C 920 mV @ 2 A
NSB8MTHE3_B/P

NSB8MTHE3_B/P

DIODE GEN PURP 1KV 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,816 -
NSB8MTHE3_B/P

Техническая

Tube Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 55pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 8A -55°C ~ 150°C 1.1 V @ 8 A
SE40PJ-M3/86A

SE40PJ-M3/86A

DIODE GEN PURP 600V 2.4A TO277A

Vishay General Semiconductor - Diodes Division

2,824 -
SE40PJ-M3/86A

Техническая

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 28pF @ 4V, 1MHz 2.2 µs 10 µA @ 600 V 600 V 2.4A (DC) -55°C ~ 175°C 920 mV @ 2 A
VFT760-E3/4W

VFT760-E3/4W

DIODE SCHOTTKY 7.5A 60V ITO-220A

Vishay General Semiconductor - Diodes Division

2,881 -
VFT760-E3/4W

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 700 µA @ 60 V 60 V 7.5A -55°C ~ 150°C 800 mV @ 7.5 A
MBRB1060HE3_B/P

MBRB1060HE3_B/P

DIODE SCHOTTKY 60V 10A TO263AB

Vishay General Semiconductor - Diodes Division

3,319 -
MBRB1060HE3_B/P

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 60 V 60 V 10A -65°C ~ 150°C 800 mV @ 10 A
MBRB10H100-E3/81

MBRB10H100-E3/81

DIODE SCHOTTKY 100V 10A TO236AB

Vishay General Semiconductor - Diodes Division

703 -
MBRB10H100-E3/81

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 4.5 µA @ 100 V 100 V 10A -65°C ~ 175°C 770 mV @ 10 A
VS-HFA06TB120S-M3

VS-HFA06TB120S-M3

DIODE GEN PURP 1.2KV 6A D2PAK

Vishay General Semiconductor - Diodes Division

384 -
VS-HFA06TB120S-M3

Техническая

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 80 ns 5 µA @ 1200 V 1200 V 6A (DC) -55°C ~ 150°C 3.9 V @ 12 A
MBR1660-E3/45

MBR1660-E3/45

DIODE SCHOTTKY 60V 16A TO220AB

Vishay General Semiconductor - Diodes Division

292 -
MBR1660-E3/45

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 1 mA @ 60 V 60 V 16A -65°C ~ 150°C 750 mV @ 16 A
VS-19TQ015-M3

VS-19TQ015-M3

DIODE SCHOTTKY 15V 19A TO220AC

Vishay General Semiconductor - Diodes Division

3,835 -
VS-19TQ015-M3

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 2000pF @ 5V, 1MHz - 10.5 mA @ 15 V 15 V 19A -55°C ~ 125°C 460 mV @ 38 A
VS-HFA25TB60-M3

VS-HFA25TB60-M3

DIODE FRED 600V 25A TO220AC

Vishay General Semiconductor - Diodes Division

803 -
VS-HFA25TB60-M3

Техническая

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 20 µA @ 600 V 600 V 25A -55°C ~ 150°C 2 V @ 50 A
FESF16JT-E3/45

FESF16JT-E3/45

DIODE GEN PURP 600V 16A ITO220AC

Vishay General Semiconductor - Diodes Division

998 -
FESF16JT-E3/45

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 600 V 600 V 16A -65°C ~ 150°C 1.5 V @ 16 A
1N5418-TAP

1N5418-TAP

DIODE AVALANCHE 400V 3A SOD64

Vishay General Semiconductor - Diodes Division

3,841 -
1N5418-TAP

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 100 ns 1 µA @ 200 V 400 V 3A -55°C ~ 175°C 1.5 V @ 9 A
MBRB1060HE3_B/I

MBRB1060HE3_B/I

DIODE SCHOTTKY 60V 10A TO263AB

Vishay General Semiconductor - Diodes Division

2,698 -
MBRB1060HE3_B/I

Техническая

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 60 V 60 V 10A -65°C ~ 150°C 800 mV @ 10 A
1N5417-TAP

1N5417-TAP

DIODE AVALANCHE 200V 3A SOD64

Vishay General Semiconductor - Diodes Division

2,696 -
1N5417-TAP

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 100 ns 1 µA @ 200 V 200 V 3A -55°C ~ 175°C 1.5 V @ 9 A
BY228-13TAP

BY228-13TAP

DIODE AVALANCHE 1KV 3A SOD64

Vishay General Semiconductor - Diodes Division

2,948 -
BY228-13TAP

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 2 µs 5 µA @ 1000 V 1000 V 3A 140°C (Max) 1.5 V @ 5 A
BYT56A-TAP

BYT56A-TAP

DIODE AVALANCHE 50V 3A SOD64

Vishay General Semiconductor - Diodes Division

2,481 -
BYT56A-TAP

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 100 ns 5 µA @ 50 V 50 V 3A -55°C ~ 175°C 1.4 V @ 3 A
BYM36C-TAP

BYM36C-TAP

DIODE AVALANCHE 600V 3A SOD64

Vishay General Semiconductor - Diodes Division

3,505 -
BYM36C-TAP

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 100 ns 5 µA @ 600 V 600 V 3A -55°C ~ 175°C 1.6 V @ 3 A
BYT56B-TAP

BYT56B-TAP

DIODE AVALANCHE 100V 3A SOD64

Vishay General Semiconductor - Diodes Division

3,520 -
BYT56B-TAP

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 100 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C 1.4 V @ 3 A
BYT56G-TAP

BYT56G-TAP

DIODE AVALANCHE 400V 3A SOD64

Vishay General Semiconductor - Diodes Division

3,406 -
BYT56G-TAP

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 100 ns 5 µA @ 400 V 400 V 3A -55°C ~ 175°C 1.4 V @ 3 A
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