+86 15815556552Диодный выпрямитель
| Фото | Производитель Часть # | Доступность | Цена | Количество | Техническая | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GC05MPS12-252SIC DIODE 1200V 5A TO-252-2 |
3,199 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 359pF @ 1V, 1MHz | 0 ns | 4 µA @ 1200 V | 1200 V | 27A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A |
|
GD30MPS12J1200V 30A TO-263-7 SIC SCHOTTKY |
928 | - |
|
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | - | 1200 V | 30A (DC) | 175°C | - | |
|
GD50MPS12H1200V 50A TO-247-2 SIC SCHOTTKY |
491 | - |
|
Техническая |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.835nF @ 1V, 1MHz | 0 ns | 15 µA @ 1200 V | 1200 V | 92A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A |
|
GD60MPS17HDIODE SCHOTTKY 1700V 60A TO-247- |
484 | - |
|
Техническая |
Tube | SiC Schottky MPS™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 4577pF @ 1V, 1MHz | - | 40 µA @ 1700 V | 1700 V | 122A (DC) | -55°C ~ 175°C | 1.8 V @ 60 A |
|
GC02MPS12-220SIC DIODE 1200V 2A TO-220-2 |
137 | - |
|
Техническая |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 127pF @ 1V, 1MHz | 0 ns | 2 µA @ 1200 V | 1200 V | 12A (DC) | -55°C ~ 175°C | 1.8 V @ 2 A |
|
|
S85BRDIODE GEN PURP REV 100V 85A DO5 |
200 | - |
|
Техническая |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 100 V | 85A | -65°C ~ 180°C | 1.1 V @ 85 A | |
|
MUR5010RDIODE GEN PURP REV 100V 50A DO5 |
195 | - |
|
Техническая |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 75 ns | 10 µA @ 50 V | 100 V | 50A | -55°C ~ 150°C | 1 V @ 50 A | |
|
GB50MPS17-247SIC DIODE 1700V 50A TO-247-2 |
555 | - |
|
Техническая |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Not For New Designs | Through Hole | 3193pF @ 1V, 1MHz | 0 ns | 60 µA @ 1700 V | 1700 V | 216A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A |
|
GB01SLT12-214DIODE SCHOTTKY 1.2KV 2.5A SMB |
3,920 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 69pF @ 1V, 1MHz | 0 ns | 10 µA @ 1200 V | 1200 V | 2.5A | -55°C ~ 175°C | 1.8 V @ 1 A |
|
|
GC08MPS12-220SIC DIODE 1200V 8A TO-220-2 |
3,155 | - |
|
Техническая |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 545pF @ 1V, 1MHz | 0 ns | 7 µA @ 1200 V | 1200 V | 43A (DC) | -55°C ~ 175°C | 1.8 V @ 8 A |
|
|
S6BDIODE GEN PURP 100V 6A DO4 |
3,228 | - |
|
Техническая |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 100 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
|
S6BRDIODE GEN PURP REV 100V 6A DO4 |
2,190 | - |
|
Техническая |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 100 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
|
S6DDIODE GEN PURP 200V 6A DO4 |
2,238 | - |
|
Техническая |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 200 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
|
S6DRDIODE GEN PURP REV 200V 6A DO4 |
2,790 | - |
|
Техническая |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 200 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
|
S6GDIODE GEN PURP 400V 6A DO4 |
3,002 | - |
|
Техническая |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 400 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
|
S6GRDIODE GEN PURP REV 400V 6A DO4 |
3,761 | - |
|
Техническая |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 400 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
|
S6JDIODE GEN PURP 600V 6A DO4 |
2,572 | - |
|
Техническая |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 600 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
|
S6JRDIODE GEN PURP REV 600V 6A DO4 |
2,910 | - |
|
Техническая |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 600 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
|
S6KDIODE GEN PURP 800V 6A DO4 |
3,038 | - |
|
Техническая |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 800 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
|
S6KRDIODE GEN PURP REV 800V 6A DO4 |
2,471 | - |
|
Техническая |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 800 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A |
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