Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

Диодный выпрямитель

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
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结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
6A80G

6A80G

DIODE GEN PURP 800V 6A R-6

Taiwan Semiconductor Corporation

2,871 -
6A80G

Техническая

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 800 V 800 V 6A -55°C ~ 150°C 1 V @ 6 A
RS2J M4G

RS2J M4G

DIODE GEN PURP 600V 2A DO214AA

Taiwan Semiconductor Corporation

2,122 -
RS2J M4G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.3 V @ 2 A
RS2K M4G

RS2K M4G

DIODE GEN PURP 800V 2A DO214AA

Taiwan Semiconductor Corporation

2,088 -
RS2K M4G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 2A -55°C ~ 150°C 1.3 V @ 2 A
RS2M M4G

RS2M M4G

DIODE GEN PURP 2A DO214AA

Taiwan Semiconductor Corporation

3,702 -
RS2M M4G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V - 2A -55°C ~ 150°C 1.3 V @ 2 A
HS2DA M2G

HS2DA M2G

DIODE GEN PURP 200V 1.5A DO214AC

Taiwan Semiconductor Corporation

2,823 -
HS2DA M2G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
HS2FA M2G

HS2FA M2G

DIODE GEN PURP 300V 1.5A DO214AC

Taiwan Semiconductor Corporation

2,378 -
HS2FA M2G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 50 ns 5 µA @ 300 V 300 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
HS2GA M2G

HS2GA M2G

DIODE GEN PURP 400V 1.5A DO214AC

Taiwan Semiconductor Corporation

2,583 -
HS2GA M2G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
HS2JA M2G

HS2JA M2G

DIODE GEN PURP 600V 1.5A DO214AC

Taiwan Semiconductor Corporation

3,157 -
HS2JA M2G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1.7 V @ 1.5 A
ESDLW RQG

ESDLW RQG

DIODE, SUPER FAST

Taiwan Semiconductor Corporation

2,742 -
ESDLW RQG

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 21pF @ 4V, 1MHz 35 ns 1 µA @ 200 V 200 V 800mA -55°C ~ 150°C 950 mV @ 800 mA
ESGLW RQG

ESGLW RQG

DIODE, SUPER FAST

Taiwan Semiconductor Corporation

3,683 -
ESGLW RQG

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 35 ns 1 µA @ 400 V 400 V 800mA -55°C ~ 150°C 1.3 V @ 800 mA
ESJLW RQG

ESJLW RQG

DIODE, SUPER FAST

Taiwan Semiconductor Corporation

3,298 -
ESJLW RQG

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 19pF @ 4V, 1MHz 35 ns 1 µA @ 600 V 600 V 800mA -55°C ~ 150°C 1.7 V @ 800 mA
ES1LD M2G

ES1LD M2G

DIODE GEN PURP 200V 1A DO214AC

Taiwan Semiconductor Corporation

2,255 -
ES1LD M2G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 16pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 950 mV @ 1 A
ES1LG M2G

ES1LG M2G

DIODE GEN PURP 400V 1A DO214AC

Taiwan Semiconductor Corporation

3,035 -
ES1LG M2G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 18pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
ES1LJ M2G

ES1LJ M2G

DIODE GEN PURP 600V 1A DO214AC

Taiwan Semiconductor Corporation

3,364 -
ES1LJ M2G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 18pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
SFT14G R0G

SFT14G R0G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation

2,534 -
SFT14G R0G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 950 mV @ 1 A
UG06A R0G

UG06A R0G

DIODE GEN PURP 50V 600MA TS-1

Taiwan Semiconductor Corporation

2,427 -
UG06A R0G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 50 V 50 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
UG06B R0G

UG06B R0G

DIODE GEN PURP 100V 600MA TS-1

Taiwan Semiconductor Corporation

3,318 -
UG06B R0G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 100 V 100 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
UG06C R0G

UG06C R0G

DIODE GEN PURP 150V 600MA TS-1

Taiwan Semiconductor Corporation

3,188 -
UG06C R0G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 150 V 150 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
UG06D R0G

UG06D R0G

DIODE GEN PURP 200V 600MA TS-1

Taiwan Semiconductor Corporation

2,715 -
UG06D R0G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 200 V 200 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
S1BH

S1BH

DIODE GEN PURP 100V 1A DO214AC

Taiwan Semiconductor Corporation

2,595 -
Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 12pF @ 4V, 1MHz 1.5 µs 1 µA @ 100 V 100 V 1A (DC) -55°C ~ 175°C 1.1 V @ 1 A
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