Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

Диодный выпрямитель

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
ES1JHR3G

ES1JHR3G

DIODE GEN PURP 600V 1A DO214AC

Taiwan Semiconductor Corporation

2,524 -
ES1JHR3G

Техническая

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 16pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
MUR190 B0G

MUR190 B0G

DIODE GEN PURP 900V 1A DO204AC

Taiwan Semiconductor Corporation

2,635 -
MUR190 B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 75 ns 5 µA @ 900 V 900 V 1A -55°C ~ 175°C 1.7 V @ 1 A
SS25LHRTG

SS25LHRTG

DIODE SCHOTTKY 50V 2A SUB SMA

Taiwan Semiconductor Corporation

3,603 -
SS25LHRTG

Техническая

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR804HB0G

SR804HB0G

DIODE SCHOTTKY 40V 8A DO201AD

Taiwan Semiconductor Corporation

2,110 -
SR804HB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 8A -55°C ~ 125°C 550 mV @ 8 A
SFF1006GHC0G

SFF1006GHC0G

DIODE GEN PURP 400V 10A ITO220AB

Taiwan Semiconductor Corporation

3,739 -
SFF1006GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 0V, 1MHz 35 ns 10 µA @ 400 V 400 V 10A -55°C ~ 150°C 1.3 V @ 10 A
ES1JL RFG

ES1JL RFG

DIODE GEN PURP 600V 1A SUB SMA

Taiwan Semiconductor Corporation

2,622 -
ES1JL RFG

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 1V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
MUR190A B0G

MUR190A B0G

DIODE GEN PURP 900V 1A DO204AL

Taiwan Semiconductor Corporation

2,006 -
MUR190A B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 75 ns 5 µA @ 900 V 900 V 1A -55°C ~ 175°C 1.7 V @ 1 A
SS26L MQG

SS26L MQG

DIODE SCHOTTKY 60V 2A SUB SMA

Taiwan Semiconductor Corporation

2,165 -
SS26L MQG

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR805 B0G

SR805 B0G

DIODE SCHOTTKY 50V 8A DO201AD

Taiwan Semiconductor Corporation

2,806 -
SR805 B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 8A -55°C ~ 150°C 700 mV @ 8 A
SFF1007G C0G

SFF1007G C0G

DIODE GEN PURP 500V 10A ITO220AB

Taiwan Semiconductor Corporation

3,536 -
SFF1007G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 0V, 1MHz 35 ns 10 µA @ 500 V 500 V 10A -55°C ~ 150°C 1.7 V @ 5 A
ES1JLHR3G

ES1JLHR3G

DIODE GEN PURP 600V 1A SUB SMA

Taiwan Semiconductor Corporation

3,695 -
ES1JLHR3G

Техническая

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
MUR190AHB0G

MUR190AHB0G

DIODE GEN PURP 900V 1A DO204AL

Taiwan Semiconductor Corporation

2,692 -
MUR190AHB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 75 ns 5 µA @ 900 V 900 V 1A -55°C ~ 175°C 1.7 V @ 1 A
SS26L MTG

SS26L MTG

DIODE SCHOTTKY 60V 2A SUB SMA

Taiwan Semiconductor Corporation

2,374 -
SS26L MTG

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR805HB0G

SR805HB0G

DIODE SCHOTTKY 50V 8A DO201AD

Taiwan Semiconductor Corporation

3,796 -
SR805HB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 8A -55°C ~ 150°C 700 mV @ 8 A
SFF1007GA C0G

SFF1007GA C0G

DIODE GEN PURP 500V 10A ITO220AB

Taiwan Semiconductor Corporation

3,858 -
SFF1007GA C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 10A -55°C ~ 150°C 1.7 V @ 5 A
ES1JLHRFG

ES1JLHRFG

DIODE GEN PURP 600V 1A SUB SMA

Taiwan Semiconductor Corporation

3,929 -
ES1JLHRFG

Техническая

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
MUR190HB0G

MUR190HB0G

DIODE GEN PURP 900V 1A DO204AC

Taiwan Semiconductor Corporation

3,945 -
MUR190HB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 75 ns 5 µA @ 900 V 900 V 1A -55°C ~ 175°C 1.7 V @ 1 A
SS26L RQG

SS26L RQG

DIODE SCHOTTKY 60V 2A SUB SMA

Taiwan Semiconductor Corporation

3,939 -
SS26L RQG

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR806 B0G

SR806 B0G

DIODE SCHOTTKY 60V 8A DO201AD

Taiwan Semiconductor Corporation

3,859 -
SR806 B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 8A -55°C ~ 150°C 700 mV @ 8 A
SFF1007GAHC0G

SFF1007GAHC0G

DIODE GEN PURP 500V 10A ITO220AB

Taiwan Semiconductor Corporation

3,480 -
SFF1007GAHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 10A -55°C ~ 150°C 1.7 V @ 5 A
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