Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

Диодный выпрямитель

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
MUR305S V7G

MUR305S V7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

3,792 -
MUR305S V7G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 50 V 50 V 3A -55°C ~ 175°C -
1T3G A1G

1T3G A1G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation

3,851 -
1T3G A1G

Техническая

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
6A05GHA0G

6A05GHA0G

DIODE GEN PURP 50V 6A R-6

Taiwan Semiconductor Corporation

3,030 -
6A05GHA0G

Техническая

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 50 V 50 V 6A -55°C ~ 150°C 1.1 V @ 6 A
MUR310S V7G

MUR310S V7G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

2,909 -
MUR310S V7G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C -
1T4G A1G

1T4G A1G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

3,997 -
1T4G A1G

Техническая

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
6A100G A0G

6A100G A0G

DIODE GEN PURP 6A R-6

Taiwan Semiconductor Corporation

3,768 -
6A100G A0G

Техническая

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 6A -55°C ~ 150°C 1 V @ 6 A
MUR315S V7G

MUR315S V7G

DIODE GEN PURP 150V 3A DO214AB

Taiwan Semiconductor Corporation

3,611 -
MUR315S V7G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 150 V 150 V 3A -55°C ~ 175°C -
1T5G A1G

1T5G A1G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

2,701 -
1T5G A1G

Техническая

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 10pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1 V @ 1 A
6A100GHA0G

6A100GHA0G

DIODE GEN PURP 6A R-6

Taiwan Semiconductor Corporation

2,825 -
6A100GHA0G

Техническая

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 6A -55°C ~ 150°C 1 V @ 6 A
MUR340S V7G

MUR340S V7G

DIODE GEN PURP 400V 3A DO214AB

Taiwan Semiconductor Corporation

3,363 -
MUR340S V7G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 50 ns 10 µA @ 400 V 400 V 3A -55°C ~ 175°C -
1T6G A1G

1T6G A1G

DIODE GEN PURP 800V 1A TS-1

Taiwan Semiconductor Corporation

2,476 -
1T6G A1G

Техническая

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1 V @ 1 A
6A10G A0G

6A10G A0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

2,768 -
6A10G A0G

Техническая

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 100 V 100 V 6A -55°C ~ 150°C 1.1 V @ 6 A
RS3A V6G

RS3A V6G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

2,317 -
RS3A V6G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C -
1T7G A1G

1T7G A1G

DIODE GEN PURP 1A TS-1

Taiwan Semiconductor Corporation

3,111 -
1T7G A1G

Техническая

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 10pF @ 4V, 1MHz - 5 µA @ 1000 V - 1A -55°C ~ 150°C 1 V @ 1 A
6A10GHA0G

6A10GHA0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

2,246 -
6A10GHA0G

Техническая

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 100 V 100 V 6A -55°C ~ 150°C 1.1 V @ 6 A
RS3A V7G

RS3A V7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

2,680 -
RS3A V7G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C -
F1T1G A1G

F1T1G A1G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation

2,703 -
F1T1G A1G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A20G A0G

6A20G A0G

DIODE GEN PURP 200V 6A R-6

Taiwan Semiconductor Corporation

3,242 -
6A20G A0G

Техническая

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 200 V 200 V 6A -55°C ~ 150°C 1 V @ 6 A
RS3B V6G

RS3B V6G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

3,273 -
RS3B V6G

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
F1T1GHA1G

F1T1GHA1G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation

3,009 -
F1T1GHA1G

Техническая

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.3 V @ 1 A
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