Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

Диодный выпрямитель

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SRA1620 C0G

SRA1620 C0G

DIODE SCHOTTKY 20V 16A TO220AC

Taiwan Semiconductor Corporation

3,486 -
SRA1620 C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 16A -55°C ~ 125°C 550 mV @ 16 A
1N4001GHB0G

1N4001GHB0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

2,678 -
1N4001GHB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1620HC0G

SRA1620HC0G

DIODE SCHOTTKY 20V 16A TO220AC

Taiwan Semiconductor Corporation

3,062 -
SRA1620HC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 16A -55°C ~ 125°C 550 mV @ 16 A
1N4002G B0G

1N4002G B0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

2,014 -
1N4002G B0G

Техническая

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1630 C0G

SRA1630 C0G

DIODE SCHOTTKY 30V 16A TO220AC

Taiwan Semiconductor Corporation

3,529 -
SRA1630 C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 16A -55°C ~ 125°C 550 mV @ 16 A
1N4002GHB0G

1N4002GHB0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

3,773 -
1N4002GHB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1630HC0G

SRA1630HC0G

DIODE SCHOTTKY 30V 16A TO220AC

Taiwan Semiconductor Corporation

3,376 -
SRA1630HC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 16A -55°C ~ 125°C 550 mV @ 16 A
1N4003G B0G

1N4003G B0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

2,717 -
1N4003G B0G

Техническая

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1640 C0G

SRA1640 C0G

DIODE SCHOTTKY 40V 16A TO220AC

Taiwan Semiconductor Corporation

3,067 -
SRA1640 C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 16A -55°C ~ 125°C 550 mV @ 16 A
1N4003GHB0G

1N4003GHB0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

2,871 -
1N4003GHB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
1N5404GHR0G

1N5404GHR0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation

3,098 -
1N5404GHR0G

Техническая

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 3A -55°C ~ 150°C 1 V @ 3 A
SF28GHR0G

SF28GHR0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

2,385 -
SF28GHR0G

Техническая

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SRA1640HC0G

SRA1640HC0G

DIODE SCHOTTKY 40V 16A TO220AC

Taiwan Semiconductor Corporation

2,227 -
SRA1640HC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 16A -55°C ~ 125°C 550 mV @ 16 A
1N4004G B0G

1N4004G B0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2,857 -
1N4004G B0G

Техническая

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1650 C0G

SRA1650 C0G

DIODE SCHOTTKY 50V 16A TO220AC

Taiwan Semiconductor Corporation

2,074 -
SRA1650 C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 16A -55°C ~ 150°C 700 mV @ 16 A
1N4004GHB0G

1N4004GHB0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

3,511 -
1N4004GHB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1650HC0G

SRA1650HC0G

DIODE SCHOTTKY 50V 16A TO220AC

Taiwan Semiconductor Corporation

3,467 -
SRA1650HC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 16A -55°C ~ 150°C 700 mV @ 16 A
1N4005G B0G

1N4005G B0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

2,022 -
1N4005G B0G

Техническая

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 10pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1660 C0G

SRA1660 C0G

DIODE SCHOTTKY 60V 16A TO220AC

Taiwan Semiconductor Corporation

3,935 -
SRA1660 C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 60 V 60 V 16A -55°C ~ 150°C 700 mV @ 16 A
1N4005GHB0G

1N4005GHB0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

3,279 -
1N4005GHB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1 V @ 1 A
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