Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

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制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
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结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
S1BL RVG

S1BL RVG

DIODE GEN PURP 100V 1A SUB SMA

Taiwan Semiconductor Corporation

108 -
S1BL RVG

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 100 V 100 V 1A -55°C ~ 175°C 1.1 V @ 1 A
MBR1060 C0G

MBR1060 C0G

DIODE SCHOTTKY 60V 10A TO220AC

Taiwan Semiconductor Corporation

706 -
MBR1060 C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 60 V 60 V 10A -55°C ~ 150°C 800 mV @ 10 A
SF2005PTHC0G

SF2005PTHC0G

DIODE GEN PURP 300V 20A TO247AD

Taiwan Semiconductor Corporation

2,681 -
SF2005PTHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 175pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 20A -55°C ~ 150°C 1.5 V @ 20 A
SF2006PTHC0G

SF2006PTHC0G

DIODE GEN PURP 400V 20A TO247AD

Taiwan Semiconductor Corporation

3,390 -
SF2006PTHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 175pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 20A -55°C ~ 150°C 1.5 V @ 20 A
TST40L150CW C0G

TST40L150CW C0G

DIODE SCHOTTKY 150V 20A TO220AB

Taiwan Semiconductor Corporation

2,248 -
TST40L150CW C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 20A -55°C ~ 150°C 860 mV @ 20 A
SFF1604G C0G

SFF1604G C0G

DIODE GEN PURP 200V 16A ITO220AB

Taiwan Semiconductor Corporation

962 -
SFF1604G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 16A -55°C ~ 150°C 975 mV @ 16 A
ES1FL RVG

ES1FL RVG

DIODE GEN PURP 300V 1A SUB SMA

Taiwan Semiconductor Corporation

2,930 -
ES1FL RVG

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 1A -55°C ~ 150°C 1.3 V @ 1 A
SFAF504G C0G

SFAF504G C0G

DIODE GEN PURP 200V 5A ITO220AC

Taiwan Semiconductor Corporation

932 -
SFAF504G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 5A -55°C ~ 150°C 975 mV @ 5 A
SFF2005G C0G

SFF2005G C0G

DIODE GEN PURP 300V 20A ITO220AB

Taiwan Semiconductor Corporation

960 -
SFF2005G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 90pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 20A -55°C ~ 150°C 1.3 V @ 10 A
SFA808G C0G

SFA808G C0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

270 -
SFA808G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 8A -55°C ~ 150°C 1.7 V @ 8 A
6A10G

6A10G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

3,452 -
6A10G

Техническая

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 100 V 100 V 6A -55°C ~ 150°C 1.1 V @ 6 A
S12MC V7G

S12MC V7G

DIODE GEN PURP 1KV 12A DO214AB

Taiwan Semiconductor Corporation

5,100 -
S12MC V7G

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 1000 V 1000 V 12A -55°C ~ 150°C 1.1 V @ 12 A
RS2DAL M3G

RS2DAL M3G

150NS, 2A, 200V, FAST RECOVERY R

Taiwan Semiconductor Corporation

6,880 -
Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 11pF @ 4V, 1MHz 150 ns 1 µA @ 200 V 200 V 2A (DC) -55°C ~ 150°C 1.02 V @ 2 A
SS1H15LW RVG

SS1H15LW RVG

DIODE SCHOTTKY 150V 1A SOD123W

Taiwan Semiconductor Corporation

2,989 -
SS1H15LW RVG

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 nA @ 150 V 150 V 1A -55°C ~ 175°C 850 mV @ 1 A
S1DLWHRVG

S1DLWHRVG

DIODE GEN PURP 200V 1A SOD123W

Taiwan Semiconductor Corporation

2,611 -
S1DLWHRVG

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 1 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
RS2JAL M3G

RS2JAL M3G

250NS, 2A, 600V, FAST RECOVERY R

Taiwan Semiconductor Corporation

2,200 -
Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 11pF @ 4V, 1MHz 250 ns 1 µA @ 600 V 600 V 2A (DC) -55°C ~ 150°C 1.3 V @ 2 A
TST20L150CW C0G

TST20L150CW C0G

DIODE SCHOTTKY 150V 10A TO220AB

Taiwan Semiconductor Corporation

971 -
TST20L150CW C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 960 mV @ 10 A
TST10H150CW C0G

TST10H150CW C0G

DIODE SCHOTTKY 150V 5A TO220AB

Taiwan Semiconductor Corporation

953 -
TST10H150CW C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 5A -55°C ~ 150°C 880 mV @ 5 A
TST10H200CW C0G

TST10H200CW C0G

DIODE SCHOTTKY 200V 5A TO220AB

Taiwan Semiconductor Corporation

950 -
TST10H200CW C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 200 V 200 V 5A -55°C ~ 150°C 910 mV @ 5 A
TST20L200CW C0G

TST20L200CW C0G

DIODE SCHOTTKY 200V 10A TO220AB

Taiwan Semiconductor Corporation

902 -
TST20L200CW C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 200 V 200 V 10A -55°C ~ 150°C 990 mV @ 10 A
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