Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

Диодный выпрямитель

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
HER605G A0G

HER605G A0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

2,199 -
HER605G A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 6A -55°C ~ 150°C 1.3 V @ 6 A
HER606G A0G

HER606G A0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation

3,991 -
HER606G A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 6A -55°C ~ 150°C 1.7 V @ 6 A
HT11G A0G

HT11G A0G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation

2,041 -
HT11G A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
HT12G A0G

HT12G A0G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation

2,866 -
HT12G A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
HT13G A0G

HT13G A0G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation

2,078 -
HT13G A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
HT14G A0G

HT14G A0G

DIODE GEN PURP 300V 1A TS-1

Taiwan Semiconductor Corporation

3,687 -
HT14G A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 300 V 300 V 1A -55°C ~ 150°C 1 V @ 1 A
HT15G A0G

HT15G A0G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

3,347 -
HT15G A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
HT16G A0G

HT16G A0G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

2,410 -
HT16G A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
HT17G A0G

HT17G A0G

DIODE GEN PURP 800V 1A TS-1

Taiwan Semiconductor Corporation

3,676 -
HT17G A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
HT18G A0G

HT18G A0G

DIODE GEN PURP 1A TS-1

Taiwan Semiconductor Corporation

2,159 -
HT18G A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
MUR160 A0G

MUR160 A0G

DIODE GEN PURP 600V 1A DO204AC

Taiwan Semiconductor Corporation

3,929 -
MUR160 A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz 50 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.25 V @ 1 A
MUR160HA0G

MUR160HA0G

DIODE GEN PURP 600V 1A DO204AC

Taiwan Semiconductor Corporation

3,217 -
MUR160HA0G

Техническая

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz 50 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.25 V @ 1 A
MUR190 A0G

MUR190 A0G

DIODE GEN PURP 900V 1A DO204AC

Taiwan Semiconductor Corporation

3,772 -
MUR190 A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 75 ns 5 µA @ 900 V 900 V 1A -55°C ~ 175°C 1.7 V @ 1 A
MUR190HA0G

MUR190HA0G

DIODE GEN PURP 900V 1A DO204AC

Taiwan Semiconductor Corporation

2,711 -
MUR190HA0G

Техническая

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 75 ns 5 µA @ 900 V 900 V 1A -55°C ~ 175°C 1.7 V @ 1 A
MUR420HA0G

MUR420HA0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

3,553 -
MUR420HA0G

Техническая

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 890 mV @ 4 A
MUR440 A0G

MUR440 A0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

3,113 -
MUR440 A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
MUR440HA0G

MUR440HA0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

3,164 -
MUR440HA0G

Техническая

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
MUR460HA0G

MUR460HA0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation

2,107 -
MUR460HA0G

Техническая

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
MUR4L20 A0G

MUR4L20 A0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

3,557 -
MUR4L20 A0G

Техническая

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 890 mV @ 4 A
MUR4L20HA0G

MUR4L20HA0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

2,616 -
MUR4L20HA0G

Техническая

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 890 mV @ 4 A
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