Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

транзистор - полевой транзистор, матрица MOSFET

制造商 Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature 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全部重置
应用所有
结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
MSCSM120AM027CT6AG

MSCSM120AM027CT6AG

PM-MOSFET-SIC-SBD~-SP6C

Microchip Technology

2,291 -
MSCSM120AM027CT6AG

Техническая

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
BSM400D12P2G003

BSM400D12P2G003

SILICON CARBIDE POWER MODULE. B

Rohm Semiconductor

3,183 -
BSM400D12P2G003

Техническая

Bulk - Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tc) - 4V @ 85mA - 38000pF @ 10V 2450W (Tc) -40°C ~ 150°C (TJ) -
CAB760M12HM3

CAB760M12HM3

1.2 KV, 760A HIGH PERFORMANCE SI

Wolfspeed, Inc.

3,045 -
CAB760M12HM3

Техническая

Box - Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 1015A (Tc) 1.73mOhm @ 760A, 15V 3.6V @ 280mA 2724nC @ 15V 79400pF @ 800V - -40°C ~ 175°C (TJ) Chassis Mount
DMC2400UV-13

DMC2400UV-13

MOSFET N/P-CH 20V SOT563

Diodes Incorporated

3,261 -
DMC2400UV-13

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active N and P-Channel Standard 20V 1.03A, 700mA 480mOhm @ 200mA, 5V 900mV @ 250µA 0.5nC @ 4.5V 37.1pF @ 10V 450mW -55°C ~ 150°C (TJ) Surface Mount
SSM6N16FE,L3F

SSM6N16FE,L3F

SMALL SIGNAL MOSFET N-CH X 2 VDS

Toshiba Semiconductor and Storage

3,675 -
SSM6N16FE,L3F

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 20V 100mA (Ta) 3Ohm @ 10mA, 4V 1.1V @ 100µA - 9.3pF @ 3V 150mW (Ta) 150°C Surface Mount
DMC3400SDW-13

DMC3400SDW-13

MOSFET N/P-CH 30V SOT363

Diodes Incorporated

3,240 -
DMC3400SDW-13

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active N and P-Channel Standard 30V 650mA, 450mA 400mOhm @ 590mA, 10V 1.6V @ 250µA 1.4nC @ 10V 55pF @ 15V 310mW -55°C ~ 150°C (TJ) Surface Mount
DMP2200UDW-13

DMP2200UDW-13

MOSFET 2P-CH 20V 0.9A SOT363

Diodes Incorporated

3,173 -
DMP2200UDW-13

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active 2 P-Channel (Dual) Standard 20V 900mA 260mOhm @ 880mA, 4.5V 1.2V @ 250µA 2.1nC @ 4.5V 184pF @ 10V 450mW -55°C ~ 150°C (TJ) Surface Mount
DMN3190LDW-13

DMN3190LDW-13

MOSFET 2N-CH 30V 1A SOT363

Diodes Incorporated

2,147 -
DMN3190LDW-13

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Logic Level Gate 30V 1A 190mOhm @ 1.3A, 10V 2.8V @ 250µA 2nC @ 10V 87pF @ 20V 320mW -55°C ~ 150°C (TJ) Surface Mount
DMN63D8LV-7

DMN63D8LV-7

MOSFET 2N-CH 30V 0.26A SOT563

Diodes Incorporated

3,217 -
DMN63D8LV-7

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Logic Level Gate 30V 260mA 2.8Ohm @ 250mA, 10V 1.5V @ 250µA 0.87nC @ 10V 22pF @ 25V 450mW -55°C ~ 150°C (TJ) Surface Mount
DMN63D8LDWQ-7

DMN63D8LDWQ-7

MOSFET 2N-CH 30V 0.22A SOT363

Diodes Incorporated

3,641 -
DMN63D8LDWQ-7

Техническая

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active 2 N-Channel (Dual) Standard 30V 220mA 2.8Ohm @ 250mA, 10V 1.5V @ 250µA 0.87nC @ 10V 22pF @ 25V 300mW -55°C ~ 150°C (TJ) Surface Mount
DMN33D8LDW-7

DMN33D8LDW-7

MOSFET 2N-CH 30V 0.25A

Diodes Incorporated

2,557 -
DMN33D8LDW-7

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 30V 250mA 2.4Ohm @ 250mA, 10V 1.5V @ 100µA 1.23nC @ 10V 48pF @ 5V 350mW -55°C ~ 150°C (TJ) Surface Mount
SSM6N35FE,LM

SSM6N35FE,LM

MOSFET 2N-CH 20V 0.18A ES6

Toshiba Semiconductor and Storage

3,863 -
SSM6N35FE,LM

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Logic Level Gate 20V 180mA 3Ohm @ 50mA, 4V 1V @ 1mA - 9.5pF @ 3V 150mW 150°C (TJ) Surface Mount
2N7002PV,115

2N7002PV,115

MOSFET 2N-CH 60V 0.35A SOT-666

Nexperia USA Inc.

3,641 -
2N7002PV,115

Техническая

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Not For New Designs 2 N-Channel (Dual) Logic Level Gate 60V 350mA 1.6Ohm @ 500mA, 10V 2.4V @ 250µA 0.8nC @ 4.5V 50pF @ 10V 330mW 150°C (TJ) Surface Mount
DMP2200UDW-7

DMP2200UDW-7

MOSFET 2P-CH 20V 0.9A SOT363

Diodes Incorporated

2,616 -
DMP2200UDW-7

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active 2 P-Channel (Dual) Standard 20V 900mA 260mOhm @ 880mA, 4.5V 1.2V @ 250µA 2.1nC @ 4.5V 184pF @ 10V 450mW -55°C ~ 150°C (TJ) Surface Mount
NX7002BKXBZ

NX7002BKXBZ

MOSFET 2N-CH 60V 0.26A 6DFN

Nexperia USA Inc.

2,157 -
NX7002BKXBZ

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Logic Level Gate 60V 260mA 2.8Ohm @ 200mA, 10V 2.1V @ 250µA 1nC @ 10V 23.6pF @ 10V 285mW -55°C ~ 150°C (TJ) Surface Mount
DMG6301UDW-7

DMG6301UDW-7

MOSFET 2N-CH 25V 0.24A SOT363

Diodes Incorporated

2,937 -
DMG6301UDW-7

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 25V 240mA 4Ohm @ 400mA, 4.5V 1.5V @ 250µA 0.36nC @ 4.5V 27.9pF @ 10V 300mW -55°C ~ 150°C (TJ) Surface Mount
NTJD5121NT2G

NTJD5121NT2G

MOSFET 2N-CH 60V 295MA SOT363

onsemi

2,102 -
NTJD5121NT2G

Техническая

Tape & Reel (TR),Cut Tape (CT),Bulk - Active 2 N-Channel (Dual) Logic Level Gate 60V 295mA 1.6Ohm @ 500mA, 10V 2.5V @ 250µA 0.9nC @ 4.5V 26pF @ 20V 250mW -55°C ~ 150°C (TJ) Surface Mount
NVJD5121NT1G

NVJD5121NT1G

MOSFET 2N-CH 60V 0.295A SC88

onsemi

2,214 -
NVJD5121NT1G

Техническая

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active 2 N-Channel (Dual) Standard 60V 295mA 1.6Ohm @ 500mA, 10V 2.5V @ 250µA 0.9nC @ 4.5V 26pF @ 20V 250mW -55°C ~ 150°C (TJ) Surface Mount
DMN601VKQ-7

DMN601VKQ-7

MOSFET 2N-CH 60V 0.305A SOT563

Diodes Incorporated

2,258 -
DMN601VKQ-7

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 60V 305mA 2Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V 250mW -65°C ~ 150°C (TJ) Surface Mount
DMG6602SVT-7

DMG6602SVT-7

MOSFET N/P-CH 30V TSOT23-6

Diodes Incorporated

2,650 -
DMG6602SVT-7

Техническая

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N and P-Channel Logic Level Gate, 4.5V Drive 30V 3.4A, 2.8A 60mOhm @ 3.1A, 10V 2.3V @ 250µA 13nC @ 10V 400pF @ 15V 840mW -55°C ~ 150°C (TJ) Surface Mount
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