Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

Транзистор - полевой транзистор, MOSFET - радиочастота

制造商 Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated







































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated
MRFE6VP5150GNR1

MRFE6VP5150GNR1

FET RF 2CH 133V 230MHZ TO-270 GW

NXP USA Inc.

3,013 -
MRFE6VP5150GNR1

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual) 230MHz 26.1dB 50 V - - 100 mA 150W 133 V
MRFE6VP5600HR5

MRFE6VP5600HR5

FET RF 2CH 130V 230MHZ NI1230

NXP USA Inc.

2,447 -
MRFE6VP5600HR5

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual) 230MHz 25dB 50 V - - 100 mA 600W 130 V
BF909AR215

BF909AR215

MOSFET N-CH SOT-143R

NXP USA Inc.

2,251 -
BF909AR215

Техническая

Bulk - Active MESFET Dual Gate 800MHz - - 40mA 2dB - - 7 V
BF909A215

BF909A215

MOSFET N-CH SOT-143B

NXP USA Inc.

2,306 -
BF909A215

Техническая

Bulk - Active N-Channel Dual Gate 800MHz - - 40mA 2dB - - 7 V
CLF1G0035-200PU

CLF1G0035-200PU

RF TRANSISTOR

NXP USA Inc.

2,954 -
Tray - Obsolete - - - - - - - - -
BF1108215

BF1108215

RF MOSFET N-CH SOT143B

NXP USA Inc.

2,435 -
Bulk - Active N-Channel - - - 10mA - - - 3 V
MRFX1K80NR5578

MRFX1K80NR5578

RF POWER FIELD-EFFECT TRANSISTOR

NXP USA Inc.

2,549 -
MRFX1K80NR5578

Техническая

Bulk - Active LDMOS (Dual) 1.8MHz ~ 400MHz 24.4dB 65 V 100mA - 100 mA 1800W 179 V
MRFE6VP5150NR1

MRFE6VP5150NR1

RF MOSFET LDMOS DL 50V TO270

NXP USA Inc.

3,272 -
MRFE6VP5150NR1

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual) 230MHz 26.1dB 50 V - - 100 mA 150W 133 V
BLF8G10LS-160,112

BLF8G10LS-160,112

RF PFET, 1-ELEMENT, ULTRA HIGH F

NXP USA Inc.

3,043 -
BLF8G10LS-160,112

Техническая

Tube - Active LDMOS 920MHz ~ 960MHz 19.7dB 30 V 5µA - 1.1 A 35W 65 V
BLF6G27-75,112

BLF6G27-75,112

RF TRANSISTOR

NXP USA Inc.

3,644 -
BLF6G27-75,112

Техническая

Tray - Obsolete LDMOS - - 28 V 18A - 600 mA 9W 65 V
BLF6G15L-250PBRN,1

BLF6G15L-250PBRN,1

RF PFET, 3-ELEMENT, L BAND, SILI

NXP USA Inc.

3,167 -
BLF6G15L-250PBRN,1

Техническая

Bulk - Active LDMOS 1.47GHz ~ 1.51GHz 18.5dB 28 V 64A - 1.41 A 60W 65 V
MRF6V12250HR5

MRF6V12250HR5

FET RF 100V 1.03GHZ NI-780

NXP USA Inc.

2,862 -
MRF6V12250HR5

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 1.03GHz 20.3dB 50 V - - 100 mA 275W 100 V
MMRF1317HR5

MMRF1317HR5

TRANS 1030MHZ 1550W PEAK 50V

NXP USA Inc.

3,564 -
MMRF1317HR5

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual) 1.03GHz 18.2dB 50 V - - 100 mA 1300W 105 V
MRFX035HR5

MRFX035HR5

TRANS LDMOS 35W 512 MHZ 65V

NXP USA Inc.

2,738 -
Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 1.8MHz ~ 512MHz 24.8dB 65 V 10µA - 15 mA 35W 179 V
A3G26D055N-2515

A3G26D055N-2515

RF REFERENCE CIRCUIT 55W 2515MHZ

NXP USA Inc.

3,382 -
A3G26D055N-2515

Техническая

Bulk - Active GaN 100MHz ~ 2.69GHz 13.9dB 48 V - - 40 mA 8W 125 V
MMRF1008HR5

MMRF1008HR5

FET RF 100V 1.03GHZ NI-780

NXP USA Inc.

2,053 -
MMRF1008HR5

Техническая

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 1.03GHz 20.3dB 50 V - - 100 mA 275W 100 V
A3G26D055N-2110

A3G26D055N-2110

RF REFERENCE CIRCUIT 25W 2110-22

NXP USA Inc.

3,709 -
A3G26D055N-2110

Техническая

Bulk - Active GaN 100MHz ~ 2.69GHz 13.9dB 48 V - - 40 mA 8W 125 V
A3G26D055N-1805

A3G26D055N-1805

RF REFERENCE CIRCUIT 25W 1805-18

NXP USA Inc.

3,684 -
A3G26D055N-1805

Техническая

Bulk - Active GaN 100MHz ~ 2.69GHz 13.9dB 48 V - - 40 mA 8W 125 V
CLF1G0035-100,112

CLF1G0035-100,112

RF SMALL SIGNAL FIELD-EFFECT TRA

NXP USA Inc.

2,760 -
CLF1G0035-100,112

Техническая

Bulk - Active GaN HEMT 3GHz 12dB 50 V - - 330 mA 100W 150 V
BLF2425M8LS140112

BLF2425M8LS140112

NOW AMPLEON, BLF2425M8LS140, POW

NXP USA Inc.

3,778 -
Bulk - Active LDMOS 2.45GHz 19dB 28 V - - 1.3 A 140W 65 V
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