+86 15815556552Транзистор - полевой транзистор, MOSFET - отдельный
| Фото | Производитель Часть # | Доступность | Цена | Количество | Техническая | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFU320PBFMOSFET N-CH 400V 3.1A TO251AA |
1,499 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRF840ASTRLPBFMOSFET N-CH 500V 8A D2PAK |
3,785 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1018 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFZ14SPBFMOSFET N-CH 60V 10A D2PAK |
3,456 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFI614GPBFMOSFET N-CH 250V 2.1A TO220-3 |
2,623 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.1A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SQM60N06-15_GE3MOSFET N-CH 60V 56A TO263 |
3,898 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 10V | 15mOhm @ 30A, 10V | 3.5V @ 250µA | 50 nC @ 10 V | ±20V | 2480 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFZ10PBFMOSFET N-CH 60V 10A TO220AB |
3,702 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IRFU224PBFMOSFET N-CH 250V 3.8A TO251AA |
2,819 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 3.8A (Tc) | 10V | 1.1Ohm @ 2.3A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SUD19N20-90-BE3MOSFET N-CH 200V 19A DPAK |
2,491 | - |
|
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 19A (Tc) | 6V, 10V | 90mOhm @ 5A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
|
IRL630STRRPBFMOSFET N-CH 200V 9A D2PAK |
3,486 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 4V, 5V | 400mOhm @ 5.4A, 5V | 2V @ 250µA | 40 nC @ 10 V | ±10V | 1100 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFU420APBFMOSFET N-CH 500V 3.3A TO251AA |
3,955 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.3A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17 nC @ 10 V | ±30V | 340 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRF9620STRLPBFMOSFET P-CH 200V 3.5A D2PAK |
3,320 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SQJQ404E-T1_GE3MOSFET N-CH 40V 200A PPAK 8 X 8 |
3,705 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 10V | 1.72mOhm @ 20A, 10V | 3.5V @ 250µA | 270 nC @ 10 V | ±20V | 16480 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IRFUC20PBFMOSFET N-CH 600V 2A TO251AA |
3,641 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRF710SPBFMOSFET N-CH 400V 2A D2PAK |
2,327 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHP6N40D-E3MOSFET N-CH 400V 6A TO220AB |
2,518 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±30V | 311 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHD6N65E-GE3MOSFET N-CH 650V 7A DPAK |
3,610 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48 nC @ 10 V | ±30V | 820 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFD310PBFMOSFET N-CH 400V 350MA 4DIP |
2,725 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 350mA (Ta) | 10V | 3.6Ohm @ 210mA, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHD690N60E-GE3MOSFET N-CH 600V 6.4A DPAK |
2,510 | - |
|
Техническая |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.4A (Tc) | 10V | 700mOhm @ 2A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 347 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFZ24PBFMOSFET N-CH 60V 17A TO220AB |
2,586 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
SIHU6N62E-GE3MOSFET N-CH 620V 6A IPAK |
3,401 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 620 V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±30V | 578 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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