+86 15815556552Транзистор - полевой транзистор, MOSFET - отдельный
| Фото | Производитель Часть # | Доступность | Цена | Количество | Техническая | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IMT65R107M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2,415 | - |
|
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IMT65R022M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2,422 | - |
|
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IMT65R039M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2,866 | - |
|
Техническая |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
BSC0303LSATMA1TRENCH >=100V PG-TDSON-8 |
3,063 | - |
|
Техническая |
Tape & Reel (TR) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 68A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 2.4V @ 72µA | 51 nC @ 10 V | ±20V | 4900 pF @ 60 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IMT65R083M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2,717 | - |
|
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IMT65R048M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2,396 | - |
|
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IPA65R190DEXKSA1MOSFET |
3,830 | - |
|
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IPA60R650CEE8210XKSA1MOSFET |
3,963 | - |
|
Bulk | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.9A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | |
|
|
CTLM7110-M832D BKTRANSISTOR |
2,323 | - |
|
Техническая |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 1A (Ta) | 1.5V, 4.5V | 250mOhm @ 100mA, 1.5V | 1.2V @ 1mA | 2.4 nC @ 4.5 V | 8V | 220 pF @ 10 V | Schottky Diode (Isolated) | 1.65W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount |
|
|
CTLM7110-M832D TRTRANSISTOR |
3,728 | - |
|
Техническая |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 1A (Ta) | 1.5V, 4.5V | 250mOhm @ 100mA, 1.5V | 1.2V @ 1mA | 2.4 nC @ 4.5 V | 8V | 220 pF @ 10 V | Schottky Diode (Isolated) | 1.65W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount |
|
|
CTLM8110-M832D TRTRANSISTOR |
3,672 | - |
|
Техническая |
Tape & Reel (TR) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 860mA (Ta) | 1.8V, 4.5V | 240mOhm @ 200mA, 1.8V | 1V @ 250µA | 3.56 nC @ 4.5 V | 8V | 200 pF @ 16 V | Schottky Diode (Isolated) | 1.65W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount |
|
|
CTLM8110-M832D BKTRANSISTOR |
3,173 | - |
|
Техническая |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 860mA (Ta) | 1.8V, 4.5V | 240mOhm @ 200mA, 1.8V | 1V @ 250µA | 3.56 nC @ 4.5 V | 8V | 200 pF @ 16 V | Schottky Diode (Isolated) | 1.65W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount |
|
MSC180SMA120SAMOSFET SIC 1200 V 180 MOHM TO-26 |
2,852 | - |
|
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 20V | 225mOhm @ 8A, 20V | 3.26V @ 500µA | 34 nC @ 20 V | +23V, -10V | 510 pF @ 1000 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | |
|
|
MSC060SMA070SAMOSFET SIC 700 V 60 MOHM TO-263- |
2,739 | - |
|
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 37A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.4V @ 1mA | 56 nC @ 20 V | +23V, -10V | 1175 pF @ 700 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
|
MSC080SMA120SAMOSFET SIC 1200 V 80 MOHM TO-263 |
3,138 | - |
|
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
|
MSC090SMA070SAMOSFET SIC 700 V 90 MOHM TO-263- |
3,473 | - |
|
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 25A (Tc) | 20V | 115mOhm @ 15A, 20V | 2.4V @ 750µA | 38 nC @ 20 V | +23V, -10V | 785 pF @ 700 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
|
MSC360SMA120SAMOSFET SIC 1200 V 360 MOHM TO-26 |
3,951 | - |
|
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 20V | 450mOhm @ 5A, 20V | 3.14V @ 250µA | 21 nC @ 20 V | +23V, -10V | 255 pF @ 1000 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | |
|
|
CMLM8205 BKDIODE |
3,336 | - |
|
Техническая |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 50 V | 280mA (Ta) | 5V, 10V | 2.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 20V | 70 pF @ 25 V | Schottky Diode (Isolated) | 150mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount |
|
|
CMLM8205 TRDIODE |
2,828 | - |
|
Техническая |
Tape & Reel (TR) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 50 V | 280mA (Ta) | 5V, 10V | 2.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 20V | 70 pF @ 25 V | Schottky Diode (Isolated) | 150mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount |
|
|
CMS2305A-HFMOSFET |
2,132 | - |
|
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.2A (Ta) | 1.8V, 10V | 25mOhm @ 10A, 10V | 1.2V @ 250µA | 10 nC @ 4.5 V | ±12V | 735 pF @ 25 V | - | 1.38W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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