+86 15815556552Транзистор - полевой транзистор, MOSFET - отдельный
| Фото | Производитель Часть # | Доступность | Цена | Количество | Техническая | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GA05JT12-263TRANS SJT 1200V 15A D2PAK |
3,236 | - |
|
Техническая |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 15A (Tc) | - | - | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Surface Mount |
|
GA05JT12-247TRANS SJT 1200V 5A TO247AB |
3,776 | - |
|
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 5A (Tc) | - | 280mOhm @ 5A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Through Hole | |
|
|
GA10JT12-247TRANS SJT 1200V 10A TO247AB |
3,174 | - |
|
Техническая |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 10A (Tc) | - | 140mOhm @ 10A | - | - | - | - | - | 170W (Tc) | 175°C (TJ) | Through Hole |
|
|
GA20JT12-247TRANS SJT 1200V 20A TO247AB |
2,543 | - |
|
Техническая |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 20A (Tc) | - | 70mOhm @ 20A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | Through Hole |
|
|
GA50JT17-247TRANS SJT 1700V 100A TO247 |
3,183 | - |
|
Техническая |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 583W (Tc) | 175°C (TJ) | Through Hole |
|
GA05JT01-46TRANS SJT 100V 9A TO46 |
3,904 | - |
|
Техническая |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 100 V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole |
|
|
G3R160MT12JSIC MOSFET N-CH 22A TO263-7 |
2,578 | - |
|
Техническая |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 15V | 192mOhm @ 10A, 15V | 2.69V @ 5mA | 28 nC @ 15 V | ±15V | 730 pF @ 800 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
GA100JT12-227TRANS SJT 1200V 160A SOT227 |
2,499 | - |
|
Техническая |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400 pF @ 800 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
|
|
GA20SICP12-247TRANS SJT 1200V 45A TO247AB |
3,660 | - |
|
Техническая |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 45A (Tc) | - | 50mOhm @ 20A | - | - | - | 3091 pF @ 800 V | - | 282W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
GA50JT12-263TRANSISTOR 1200V 100A TO263-7 |
2,802 | - |
|
Tube | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
GA100JT17-227TRANS SJT 1700V 160A SOT227 |
3,296 | - |
|
Техническая |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400 pF @ 800 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
|
G2R1000MT17DSIC MOSFET N-CH 4A TO247-3 |
9,514 | - |
|
Техническая |
Tube | G2R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 4A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 4V @ 2mA | - | +20V, -5V | 139 pF @ 1000 V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
G3R350MT12JSIC MOSFET N-CH 11A TO263-7 |
6,800 | - |
|
Техническая |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 15V | 420mOhm @ 4A, 15V | 2.69V @ 2mA | 12 nC @ 15 V | ±15V | 334 pF @ 800 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
G2R1000MT17JSIC MOSFET N-CH 3A TO263-7 |
17,210 | - |
|
Техническая |
Tube | G2R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 3A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 4V @ 2mA | - | +20V, -10V | 139 pF @ 1000 V | - | 54W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
G3R450MT17JSIC MOSFET N-CH 9A TO263-7 |
7,574 | - |
|
Техническая |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 9A (Tc) | 15V | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 18 nC @ 15 V | ±15V | 454 pF @ 1000 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
G3R75MT12KSIC MOSFET N-CH 41A TO247-4 |
951 | - |
|
Техническая |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 207W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
G3R75MT12JSIC MOSFET N-CH 42A TO263-7 |
2,540 | - |
|
Техническая |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 42A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 224W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
G3R160MT17DSIC MOSFET N-CH 21A TO247-3 |
539 | - |
|
Техническая |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 21A (Tc) | 15V | 208mOhm @ 12A, 15V | 2.7V @ 5mA | 51 nC @ 15 V | ±15V | 1272 pF @ 1000 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
G3R160MT17JSIC MOSFET N-CH 22A TO263-7 |
1,690 | - |
|
Техническая |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 22A (Tc) | 15V | 208mOhm @ 12A, 15V | 2.7V @ 5mA | 51 nC @ 15 V | ±15V | 1272 pF @ 1000 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
G3R40MT12DSIC MOSFET N-CH 71A TO247-3 |
248 | - |
|
Техническая |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 71A (Tc) | 15V | 48mOhm @ 35A, 15V | 2.69V @ 10mA | 106 nC @ 15 V | ±15V | 2929 pF @ 800 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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