Фото | Производитель Часть # | Доступность | Цена | Количество | Техническая | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SPI80N03S2-03MOSFET N-CH 30V 80A TO262-3 |
2,567 | - |
|
![]() Техническая |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 10V | 3.4mOhm @ 80A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 7020 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
SPI80N03S2L-03MOSFET N-CH 30V 80A TO262-3 |
3,742 | - |
|
![]() Техническая |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.1mOhm @ 80A, 10V | 2V @ 250µA | 220 nC @ 10 V | ±20V | 8180 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IPB180N04S400ATMA1MOSFET N-CH 40V 180A TO263-7 |
3,892 | - |
|
![]() Техническая |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 0.98mOhm @ 100A, 10V | 4V @ 230µA | 286 nC @ 10 V | ±20V | 22880 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
IMBF170R450M1XTMA1SICFET N-CH 1700V 9.8A TO263-7 |
3,542 | - |
|
![]() Техническая |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 9.8A (Tc) | 12V, 15V | 450mOhm @ 2A, 15V | 5.7V @ 2.5mA | 11 nC @ 12 V | +20V, -10V | 610 pF @ 1000 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
IRFP4229PBFMOSFET N-CH 250V 44A TO247AC |
3,427 | - |
|
![]() Техническая |
Bulk,Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 44A (Tc) | 10V | 46mOhm @ 26A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4560 pF @ 25 V | - | 310W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
![]() |
IPP111N15N3GXKSA1MOSFET N-CH 150V 83A TO220-3 |
2,312 | - |
|
![]() Техническая |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 83A (Tc) | 8V, 10V | 11.1mOhm @ 83A, 10V | 4V @ 160µA | 55 nC @ 10 V | ±20V | 3230 pF @ 75 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRLP3034PBFMOSFET N-CH 40V 195A TO247AC |
2,085 | - |
|
![]() Техническая |
Bulk,Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162 nC @ 4.5 V | ±20V | 10315 pF @ 25 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IPT60R125CFD7XTMA1MOSFET N-CH 600V 21A 8HSOF |
3,490 | - |
|
![]() Техническая |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 125mOhm @ 6.8A, 10V | 4.5V @ 340µA | 31 nC @ 10 V | ±20V | 1330 pF @ 400 V | - | 127W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
IPP076N15N5AKSA1MOSFET N-CH 150V 112A TO220-3 |
3,193 | - |
|
![]() Техническая |
Tube | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 112A (Tc) | 8V, 10V | 7.6mOhm @ 56A, 10 | 4.6V @ 160µA | 21 nC @ 10 V | ±20V | 4700 pF @ 75 V | Standard | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IPT111N20NFDATMA1MOSFET N-CH 200V 96A 8HSOF |
3,494 | - |
|
![]() Техническая |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 96A (Tc) | 10V | 11.1mOhm @ 96A, 10V | 4V @ 267µA | 87 nC @ 10 V | ±20V | 7000 pF @ 100 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
IPB60R099CPAATMA1MOSFET N-CH 600V 31A TO263-3 |
3,890 | - |
|
![]() Техническая |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
![]() |
IRFI3205PBFMOSFET N-CH 55V 64A TO220AB FP |
2,970 | - |
|
![]() Техническая |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | 10V | 8mOhm @ 34A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IMBG120R220M1HXTMA1SICFET N-CH 1.2KV 13A TO263 |
2,062 | - |
|
![]() Техническая |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 13A (Tc) | - | 294mOhm @ 4A, 18V | 5.7V @ 1.6mA | 9.4 nC @ 18 V | +18V, -15V | 312 pF @ 800 V | Standard | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
SPI80N03S2L-04MOSFET N-CH 30V 80A TO262-3 |
3,010 | - |
|
![]() Техническая |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 4.2mOhm @ 80A, 10V | 2V @ 130µA | 105 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
SPI80N03S2L-05MOSFET N-CH 30V 80A TO262-3 |
3,821 | - |
|
![]() Техническая |
Tube | OptiMOS™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 5.2mOhm @ 55A, 10V | 2V @ 110µA | 89.7 nC @ 10 V | ±20V | 3320 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
SPI80N03S2L-06MOSFET N-CH 30V 80A TO262-3 |
2,078 | - |
|
![]() Техническая |
Tube | OptiMOS™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 6.2mOhm @ 80A, 10V | 2V @ 80µA | 68 nC @ 10 V | ±20V | 2530 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
SPI80N04S2-04MOSFET N-CH 40V 80A TO262-3 |
2,926 | - |
|
![]() Техническая |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 6980 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
SPI80N06S-08MOSFET N-CH 55V 80A TO262-3 |
2,395 | - |
|
![]() Техническая |
Tube | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8mOhm @ 80A, 10V | 4V @ 240µA | 187 nC @ 10 V | ±20V | 3660 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
SPI80N06S2-07MOSFET N-CH 55V 80A TO262-3 |
3,199 | - |
|
![]() Техническая |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | 4V @ 180µA | 110 nC @ 10 V | ±20V | 4540 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
SPI80N06S2-08MOSFET N-CH 55V 80A TO262-3 |
2,808 | - |
|
![]() Техническая |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | 4V @ 150µA | 96 nC @ 10 V | ±20V | 3800 pF @ 25 V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |