Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

Диодный выпрямитель

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
CRS20I40A(TE85L,QM

CRS20I40A(TE85L,QM

DIODE SCHOTTKY 40V 2A S-FLAT

Toshiba Semiconductor and Storage

2,826 -
CRS20I40A(TE85L,QM

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 35pF @ 10V, 1MHz - 60 µA @ 40 V 40 V 2A 150°C (Max) 600 mV @ 2 A
CRS20I40B(TE85L,QM

CRS20I40B(TE85L,QM

DIODE SCHOTTKY 40V 2A S-FLAT

Toshiba Semiconductor and Storage

3,998 -
CRS20I40B(TE85L,QM

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 62pF @ 10V, 1MHz - 100 µA @ 40 V 40 V 2A 150°C (Max) 520 mV @ 2 A
CRS30I30A(TE85L,QM

CRS30I30A(TE85L,QM

DIODE SCHOTTKY 30V 3A S-FLAT

Toshiba Semiconductor and Storage

2,052 -
CRS30I30A(TE85L,QM

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 82pF @ 10V, 1MHz - 100 µA @ 30 V 30 V 3A 150°C (Max) 490 mV @ 3 A
DSF01S30SC,L3F

DSF01S30SC,L3F

DIODE SCHOTTKY 30V 100MA SC2

Toshiba Semiconductor and Storage

2,382 -
DSF01S30SC,L3F

Техническая

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Obsolete Surface Mount 9.3pF @ 0V, 1MHz - 50 µA @ 30 V 30 V 100mA 125°C (Max) 500 mV @ 100 mA
CRH01(TE85R,Q,M)

CRH01(TE85R,Q,M)

DIODE GEN PURP 200V 1A SFLAT

Toshiba Semiconductor and Storage

2,896 -
CRH01(TE85R,Q,M)

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 10 µA @ 200 V 200 V 1A -40°C ~ 150°C 980 mV @ 1 A
CRS12(TE85L,Q,M)

CRS12(TE85L,Q,M)

DIODE SCHOTTKY 60V 1A SFLAT

Toshiba Semiconductor and Storage

2,321 -
CRS12(TE85L,Q,M)

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 60 V 60 V 1A -40°C ~ 150°C 580 mV @ 1 A
CMS21(TE12L,Q,M)

CMS21(TE12L,Q,M)

X35 PB-F DIODE M-FLAT MOQ=3000 V

Toshiba Semiconductor and Storage

3,756 -
Tape & Reel (TR) RoHS - - Active - - - - - - - -
CMF03(TE12L,Q,M)

CMF03(TE12L,Q,M)

DIODE GEN PURP 900V 500MA M-FLAT

Toshiba Semiconductor and Storage

3,300 -
CMF03(TE12L,Q,M)

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 100 ns 50 µA @ 900 V 900 V 500mA -40°C ~ 125°C 2.5 V @ 500 mA
CRF03(TE85L,Q,M)

CRF03(TE85L,Q,M)

DIODE GEN PURP 600V 700MA SFLAT

Toshiba Semiconductor and Storage

2,668 -
CRF03(TE85L,Q,M)

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Last Time Buy Surface Mount - 100 ns 50 µA @ 600 V 600 V 700mA -40°C ~ 150°C 2 V @ 700 mA
CRG05(TE85L,Q,M)

CRG05(TE85L,Q,M)

DIODE GEN PURP 800V 1A S-FLAT

Toshiba Semiconductor and Storage

2,686 -
CRG05(TE85L,Q,M)

Техническая

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 10 µA @ 800 V 800 V 1A -40°C ~ 150°C 1.2 V @ 1 A
CMF01A,LQ(M

CMF01A,LQ(M

MOSFET N-CH

Toshiba Semiconductor and Storage

3,672 -
CMF01A,LQ(M

Техническая

Box RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 100 ns 50 µA @ 600 V 600 V 2A 150°C 2 V @ 2 A
CMF02A,LQ(M

CMF02A,LQ(M

MOSFET N-CH

Toshiba Semiconductor and Storage

3,789 -
CMF02A,LQ(M

Техническая

Box RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 100 ns 50 µA @ 600 V 600 V 1A 150°C 2 V @ 1 A
CMG03A,LQ(M

CMG03A,LQ(M

MOSFET N-CH

Toshiba Semiconductor and Storage

2,709 -
CMG03A,LQ(M

Техническая

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 5 µA @ 600 V 600 V 2A 150°C 1.1 V @ 2 A
CMG06A,LQ(M

CMG06A,LQ(M

MOSFET N-CH

Toshiba Semiconductor and Storage

2,009 -
CMG06A,LQ(M

Техническая

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 5 µA @ 600 V 600 V 1A 150°C 1.1 V @ 1 A
CRF03A,LQ(M

CRF03A,LQ(M

MOSFET N-CH

Toshiba Semiconductor and Storage

2,365 -
CRF03A,LQ(M

Техническая

Box RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 100 ns 50 µA @ 600 V 600 V 700mA 150°C 2 V @ 700 mA
CRG04A,LQ(M

CRG04A,LQ(M

MOSFET N-CH

Toshiba Semiconductor and Storage

2,885 -
CRG04A,LQ(M

Техническая

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 5 µA @ 600 V 600 V 1A 150°C 1.1 V @ 1 A
CMS14(TE12L,Q,M)

CMS14(TE12L,Q,M)

DIODE SCHOTTKY 60V 2A MFLAT

Toshiba Semiconductor and Storage

3,147 -
CMS14(TE12L,Q,M)

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 60 V 60 V 2A -40°C ~ 150°C 580 mV @ 2 A
CMS07(TE12L,Q,M)

CMS07(TE12L,Q,M)

DIODE SCHOTTKY 30V 2A MFLAT

Toshiba Semiconductor and Storage

2,889 -
CMS07(TE12L,Q,M)

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 30 V 30 V 2A -40°C ~ 150°C 450 mV @ 2 A
CRS10I30C(TE85L,QM

CRS10I30C(TE85L,QM

DIODE SCHOTTKY 30V 1A S-FLAT

Toshiba Semiconductor and Storage

3,750 -
CRS10I30C(TE85L,QM

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 82pF @ 10V, 1MHz - 100 µA @ 30 V 30 V 1A 150°C (Max) 360 mV @ 1 A
CRS15I30A(TE85L,QM

CRS15I30A(TE85L,QM

DIODE SCHOTTKY 30V 1.5A S-FLAT

Toshiba Semiconductor and Storage

3,011 -
CRS15I30A(TE85L,QM

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 50pF @ 10V, 1MHz - 60 µA @ 30 V 30 V 1.5A 150°C (Max) 460 mV @ 1.5 A
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