Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

Диодный выпрямитель

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
CRS15I30B(TE85L,QM

CRS15I30B(TE85L,QM

DIODE SCHOTTKY 30V 1.5A S-FLAT

Toshiba Semiconductor and Storage

2,907 -
CRS15I30B(TE85L,QM

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 82pF @ 10V, 1MHz - 100 µA @ 30 V 30 V 1.5A 150°C (Max) 400 mV @ 1.5 A
CRS15I40A(TE85L,QM

CRS15I40A(TE85L,QM

DIODE SCHOTTKY 40V 1.5A S-FLAT

Toshiba Semiconductor and Storage

2,442 -
CRS15I40A(TE85L,QM

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 35pF @ 10V, 1MHz - 60 µA @ 40 V 40 V 1.5A 150°C (Max) 550 mV @ 1.5 A
CMH04(TE12L,Q,M)

CMH04(TE12L,Q,M)

DIODE GEN PURP 200V 1A MFLAT

Toshiba Semiconductor and Storage

2,619 -
CMH04(TE12L,Q,M)

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 10 µA @ 200 V 200 V 1A -40°C ~ 150°C 980 mV @ 1 A
CMH01(TE12L,Q,M)

CMH01(TE12L,Q,M)

DIODE GEN PURP 200V 3A M-FLAT

Toshiba Semiconductor and Storage

3,145 -
CMH01(TE12L,Q,M)

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 100 ns 10 µA @ 200 V 200 V 3A -40°C ~ 150°C 980 mV @ 3 A
CMG03(TE12L,Q,M)

CMG03(TE12L,Q,M)

DIODE GEN PURP 600V 2A M-FLAT

Toshiba Semiconductor and Storage

2,858 -
CMG03(TE12L,Q,M)

Техническая

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Last Time Buy Surface Mount - - 10 µA @ 600 V 600 V 2A -40°C ~ 150°C 1.1 V @ 2 A
CMS08(TE12L,Q,M)

CMS08(TE12L,Q,M)

DIODE SCHOTTKY 30V 1A M-FLAT

Toshiba Semiconductor and Storage

2,051 -
CMS08(TE12L,Q,M)

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 70pF @ 10V, 1MHz - 1.5 mA @ 30 V 30 V 1A -40°C ~ 125°C 370 mV @ 3 A
CMS09(TE12L,Q,M)

CMS09(TE12L,Q,M)

DIODE SCHOTTKY 30V 1A M-FLAT

Toshiba Semiconductor and Storage

2,430 -
CMS09(TE12L,Q,M)

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 70pF @ 10V, 1MHz - 500 µA @ 30 V 30 V 1A -40°C ~ 150°C 450 mV @ 1 A
CMF01(TE12L,Q,M)

CMF01(TE12L,Q,M)

DIODE GEN PURP 600V 2A MFLAT

Toshiba Semiconductor and Storage

3,925 -
CMF01(TE12L,Q,M)

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Last Time Buy Surface Mount - 100 ns 50 µA @ 600 V 600 V 2A -40°C ~ 150°C 2 V @ 2 A
CRS13(TE85L,Q,M)

CRS13(TE85L,Q,M)

DIODE SCHOTTKY 60V 1A S-FLAT

Toshiba Semiconductor and Storage

2,327 -
CRS13(TE85L,Q,M)

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 40pF @ 10V, 1MHz - 50 µA @ 60 V 60 V 1A 150°C (Max) 550 mV @ 1 A
CRS30I40A(TE85L,QM

CRS30I40A(TE85L,QM

DIODE SCHOTTKY 40V 3A S-FLAT

Toshiba Semiconductor and Storage

3,223 -
CRS30I40A(TE85L,QM

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 62pF @ 10V, 1MHz - 100 µA @ 40 V 40 V 3A 150°C (Max) 550 mV @ 3 A
CMS10I40A(TE12L,QM

CMS10I40A(TE12L,QM

DIODE SCHOTTKY 40V 1A M-FLAT

Toshiba Semiconductor and Storage

3,630 -
CMS10I40A(TE12L,QM

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 62pF @ 10V, 1MHz - 100 µA @ 40 V 40 V 1A 150°C (Max) 450 mV @ 1 A
CMH07(TE12L,Q,M)

CMH07(TE12L,Q,M)

DIODE GEN PURP 200V 2A M-FLAT

Toshiba Semiconductor and Storage

3,754 -
CMH07(TE12L,Q,M)

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 100 ns 10 µA @ 200 V 200 V 2A -40°C ~ 150°C 980 mV @ 2 A
CMS20I30A(TE12L,QM

CMS20I30A(TE12L,QM

DIODE SCHOTTKY 30V 2A M-FLAT

Toshiba Semiconductor and Storage

2,698 -
CMS20I30A(TE12L,QM

Техническая

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 82pF @ 10V, 1MHz - 100 µA @ 30 V 30 V 2A 150°C (Max) 450 mV @ 2 A
1SS404,H3F

1SS404,H3F

DIODE SCHOTTKY 20V 300MA USC

Toshiba Semiconductor and Storage

66,705 -
1SS404,H3F

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 46pF @ 0V, 1MHz - 50 µA @ 20 V 20 V 300mA 125°C (Max) 450 mV @ 300 mA
1SS406,H3F

1SS406,H3F

SMALL SIGNAL SCHOTTKY BARRIER DI

Toshiba Semiconductor and Storage

3,849 -
1SS406,H3F

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 3.9pF @ 0V, 1MHz - 500 nA @ 20 V 20 V 50mA 125°C (Max) 550 mV @ 50 mA
TBAS16,LM

TBAS16,LM

DIODE GEN PURP 80V 215MA SOT23-3

Toshiba Semiconductor and Storage

17,073 -
TBAS16,LM

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - - 80 V 215mA - -
1SS193,LF

1SS193,LF

DIODE GEN PURP 80V 100MA SMINI

Toshiba Semiconductor and Storage

15,447 -
1SS193,LF

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 3pF @ 0V, 1MHz 4 ns 500 nA @ 80 V 80 V 100mA 125°C (Max) 1.2 V @ 100 mA
1SS416CT,L3F

1SS416CT,L3F

DIODE SCHOTTKY 30V 100MA CST2

Toshiba Semiconductor and Storage

45,285 -
1SS416CT,L3F

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 15pF @ 0V, 1MHz - 50 µA @ 30 V 30 V 100mA 125°C (Max) 500 mV @ 100 mA
CTS05S30,L3F

CTS05S30,L3F

DIODE SCHOTTKY 30V 500MA CST2

Toshiba Semiconductor and Storage

16,586 -
CTS05S30,L3F

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 55pF @ 0V, 1MHz - 150 µA @ 10 V 30 V 500mA 125°C (Max) 340 mV @ 100 mA
CUHS20F30,H3F

CUHS20F30,H3F

SCHOTTKY BARRIER DIODE, 30V/2A,

Toshiba Semiconductor and Storage

7,316 -
CUHS20F30,H3F

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 380pF @ 0V, 1MHz - 60 µA @ 30 V 30 V 2A 150°C (Max) 470 mV @ 2 A
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