+86 15815556552Диодный выпрямитель
| Фото | Производитель Часть # | Доступность | Цена | Количество | Техническая | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
OB2051VOB2051/UNCASED/NO MARK*CHIPS O |
3,843 | - |
|
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
OB2052VOB2052/UNCASED/NO MARK*CHIPS O |
3,556 | - |
|
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
WNSC6D06650QSILICON CARBIDE SCHOTTKY DIODE I |
3,000 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 327pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 6A | 175°C | 1.4 V @ 6 A | ||
|
BYC30WT-600PQDIODE GEN PURP 600V 30A TO247-3 |
2,928 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 22 ns | 10 µA @ 600 V | 600 V | 30A | 175°C (Max) | 2.75 V @ 30 A | |
|
NXPSC106506QDIODE SCHOTTKY 650V 10A TO220AC |
3,000 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | |
|
NXPSC10650X6QDIODE SCHOTTKY 650V 10A TO220F |
3,000 | - |
|
Техническая |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | |
|
|
BYC75W-1200PQSTANDARD MARKING * HORIZONTAL, R |
2,890 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 85 ns | 250 µA @ 1200 V | 1200 V | 75A | 175°C (Max) | - | |
|
|
NXPSC04650X6QDIODE SCHOTTKY 650V 4A TO220F |
2,998 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 130pF @ 1V, 1MHz | 0 ns | 170 µA @ 650 V | 650 V | 4A | 175°C (Max) | 1.7 V @ 4 A | |
|
|
BYC30-600P,127DIODE GEN PURP 600V 30A TO220AC |
2,208 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 600 V | 600 V | 30A | 175°C (Max) | 1.8 V @ 30 A | |
|
|
WNSC2D151200WQSILICON CARBIDE SCHOTTKY DIODE |
1,900 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 700pF @ 1V, 1MHz | 0 ns | 150 µA @ 1200 V | 1200 V | 15A | 175°C | 1.7 V @ 15 A | |
|
NXPSC126506QSILICON CARBIDE POWER DIODE |
2,984 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 380pF @ 1V, 1MHz | 0 ns | 80 µA @ 650 V | 650 V | 12A | 175°C (Max) | 1.7 V @ 12 A | ||
|
|
WNSC6D08650QSILICON CARBIDE SCHOTTKY DIODE I |
3,000 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 402pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 8A | 175°C | 1.4 V @ 8 A | ||
|
|
WNSC2D10650XQSILICON CARBIDE SCHOTTKY DIODE |
2,995 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 310pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 10A | 175°C | 1.7 V @ 10 A | |
|
|
NXPSC16650B6JSILICON CARBIDE POWER DIODE |
3,196 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 534pF @ 1V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 16A | 175°C (Max) | 1.7 V @ 16 A | ||
|
WNSC6D20650WQSILICON CARBIDE SCHOTTKY DIODE I |
1,180 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.2nF @ 1V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 20A | 175°C | 1.4 V @ 20 A | ||
|
|
WNSC10650WQSILICON CARBIDE SCHOTTKY DIODE |
1,190 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 328pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 10A | 175°C | 1.7 V @ 10 A | |
|
NXPSC08650B6JDIODE SCHOTTKY 650V 8A D2PAK |
3,175 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
|
NXPSC10650D6JDIODE SCHOTTKY 650V 10A DPAK |
7,440 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | |
|
|
WNSC6D10650QSILICON CARBIDE SCHOTTKY DIODE I |
3,000 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 500pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 10A | 175°C | 1.4 V @ 10 A | ||
|
|
BYC60W-600PQDIODE GEN PURP 600V 60A TO247-2 |
2,705 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 60A | 175°C (Max) | 2.6 V @ 60 A |
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