+86 15815556552Диодный выпрямитель
| Фото | Производитель Часть # | Доступность | Цена | Количество | Техническая | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
OB2003/001VOB2003/001V/NAU000/NO MARK*CHIPS |
3,138 | - |
|
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
WNSC08650T6JSILICON CARBIDE POWER DIODE |
2,976 | - |
|
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 267pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | ||
|
NXPSC06650QDIODE SCHOTTKY 650V 6A TO220AC |
1,998 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 190pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | |
|
BYV29FX-600,127DIODE GEN PURP 600V 9A TO220FP |
245 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 9A | 150°C (Max) | 1.9 V @ 8 A | |
|
|
NXPLQSC10650QDIODE SCHOTTKY 650V 10A TO220AC |
923 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.85 V @ 10 A | |
|
|
WNSC10650T6JSILICON CARBIDE POWER DIODE |
2,940 | - |
|
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 328pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | ||
|
|
NXPSC10650QDIODE SCHOTTKY 650V 10A TO220AC |
1,943 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | |
|
|
WNSC051200QSILICON CARBIDE POWER DIODE |
2,980 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 5A | 175°C (Max) | 1.6 V @ 5 A | |
|
|
WNSC101200QSILICON CARBIDE POWER DIODE |
2,435 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 510pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 10A | 175°C (Max) | 1.6 V @ 10 A | |
|
|
WNSC101200WQSILICON CARBIDE POWER DIODE |
1,200 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 510pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 10A | 175°C (Max) | 1.6 V @ 10 A | |
|
BYV25F-600,127DIODE GEN PURP 600V 5A TO220AC |
3,074 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 5A | 150°C (Max) | 1.9 V @ 5 A | |
|
|
BYV25FX-600,127DIODE GEN PURP 600V 5A TO220FP |
2,093 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 5A | 150°C (Max) | 1.9 V @ 5 A | |
|
|
BYC20-600,127DIODE GEN PURP 500V 20A TO220AC |
5,415 | - |
|
Техническая |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 200 µA @ 600 V | 500 V | 20A | 150°C (Max) | 2.9 V @ 20 A | |
|
|
WNSC101200CWQSILICON CARBIDE POWER DIODE |
480 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 10A | 175°C (Max) | 1.6 V @ 5 A | |
|
|
WNSC2D06650TJSILICON CARBIDE SCHOTTKY DIODE |
2,994 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 198pF @ 1V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 6A | 175°C | 1.7 V @ 6 A | |
|
|
WNSC04650T6JSILICON CARBIDE POWER DIODE |
1,943 | - |
|
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 141pF @ 1V, 1MHz | 0 ns | 25 µA @ 650 V | 650 V | 4A | 175°C (Max) | 1.7 V @ 4 A | ||
|
|
WNSC201200WQSILICON CARBIDE POWER DIODE |
1,179 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.02nF @ 1V, 1MHz | 0 ns | 220 µA @ 1200 V | 1200 V | 20A | 175°C (Max) | 1.6 V @ 20 A | |
|
|
WNSC201200CWQSILICON CARBIDE POWER DIODE |
476 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 510pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 20A | 175°C (Max) | 1.6 V @ 10 A | |
|
|
NXPSC04650QDIODE SCHOTTKY 650V 4A TO220AC |
2,000 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 130pF @ 1V, 1MHz | 0 ns | 170 µA @ 650 V | 650 V | 4A | 175°C (Max) | 1.7 V @ 4 A | |
|
WNSC401200CWQSILICON CARBIDE POWER DIODE |
480 | - |
|
Техническая |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 810pF @ 1V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 40A | 175°C (Max) | 1.75 V @ 20 A |
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