+86 15815556552Транзистор - полевой транзистор, MOSFET - отдельный
| Фото | Производитель Часть # | Доступность | Цена | Количество | Техническая | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHP28N65E-GE3MOSFET N-CH 650V 29A TO220AB |
2,740 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 29A (Tc) | 10V | 112mOhm @ 14A, 10V | 4V @ 250µA | 140 nC @ 10 V | ±30V | 3405 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SI4166DY-T1-GE3MOSFET N-CH 30V 30.5A 8SO |
2,470 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30.5A (Tc) | 4.5V, 10V | 3.9mOhm @ 15A, 10V | 2.4V @ 250µA | 65 nC @ 10 V | ±20V | 2730 pF @ 15 V | - | 3W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI7421DN-T1-E3MOSFET P-CH 30V 6.4A PPAK1212-8 |
2,466 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 6.4A (Ta) | 4.5V, 10V | 25mOhm @ 9.8A, 10V | 3V @ 250µA | 40 nC @ 10 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFR214TRPBFMOSFET N-CH 250V 2.2A DPAK |
1,833 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFR9214TRLPBFMOSFET P-CH 250V 2.7A DPAK |
2,940 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 2.7A (Tc) | 10V | 3Ohm @ 1.7A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 220 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFR1N60ATRPBF-BE3MOSFET N-CH 600V 1.4A DPAK |
1,869 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.4A (Tc) | - | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14 nC @ 10 V | ±30V | 229 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFR024TRPBF-BE3MOSFET N-CH 60V 14A DPAK |
1,925 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | - | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHG22N50D-GE3MOSFET N-CH 500V 22A TO247AC |
2,182 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 230mOhm @ 11A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHP105N60EF-GE3MOSFET N-CH 600V 29A TO220AB |
2,126 | - |
|
Техническая |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 102mOhm @ 13A, 10V | 5V @ 250µA | 53 nC @ 10 V | ±30V | 1804 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRFR1N60ATRPBFMOSFET N-CH 600V 1.4A DPAK |
1,014 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14 nC @ 10 V | ±30V | 229 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIR622DP-T1-RE3MOSFET N-CH 150V 12.6A PPAK |
14,866 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | ThunderFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 12.6A (Ta), 51.6A (Tc) | 7.5V, 10V | 17.7mOhm @ 20A, 10V | 4.5V @ 250µA | 41 nC @ 10 V | ±20V | 1516 pF @ 75 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI4686DY-T1-GE3MOSFET N-CH 30V 18.2A 8SO |
2,378 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET®, WFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18.2A (Tc) | 4.5V, 10V | 9.5mOhm @ 13.8A, 10V | 3V @ 250µA | 26 nC @ 10 V | ±20V | 1220 pF @ 15 V | - | 3W (Ta), 5.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIRA80DP-T1-RE3MOSFET N-CH 30V 100A PPAK SO-8 |
3,000 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 0.62mOhm @ 20A, 10V | 2.2V @ 250µA | 188 nC @ 10 V | +20V, -16V | 9530 pF @ 15 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SQD100N02-3M5L_GE3MOSFET N-CH 20V 100A TO252AA |
1,691 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 30A, 10V | 2.5V @ 250µA | 110 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SIR800DP-T1-GE3MOSFET N-CH 20V 50A PPAK SO-8 |
1,751 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 50A (Tc) | 2.5V, 10V | 2.3mOhm @ 15A, 10V | 1.5V @ 250µA | 133 nC @ 10 V | ±12V | 5125 pF @ 10 V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFR420TRLPBFMOSFET N-CH 500V 2.4A DPAK |
2,995 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHP35N60E-GE3MOSFET N-CH 600V 32A TO220AB |
2,082 | - |
|
Техническая |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 94mOhm @ 17A, 10V | 4V @ 250µA | 132 nC @ 10 V | ±30V | 2760 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SI7120ADN-T1-GE3MOSFET N-CH 60V 6A PPAK1212-8 |
2,501 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4.5V, 10V | 21mOhm @ 9.5A, 10V | 3V @ 250µA | 45 nC @ 10 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIRC04DP-T1-GE3MOSFET N-CH 30V 60A PPAK SO-8 |
1,028 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.45mOhm @ 15A, 10V | 2.1V @ 250µA | 56 nC @ 10 V | +20V, -16V | 2850 pF @ 15 V | Schottky Diode (Body) | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFR020TRPBFMOSFET N-CH 60V 14A DPAK |
1,352 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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