+86 15815556552Транзистор - полевой транзистор, MOSFET - отдельный
| Фото | Производитель Часть # | Доступность | Цена | Количество | Техническая | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIR688DP-T1-GE3MOSFET N-CH 60V 60A PPAK SO-8 |
2,117 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.7V @ 250µA | 66 nC @ 10 V | ±20V | 3105 pF @ 30 V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHP28N60EF-GE3MOSFET N-CH 600V 28A TO220AB |
3,976 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2714 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHF30N60E-GE3MOSFET N-CH 600V 29A TO220 |
3,502 | - |
|
Техническая |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHFB20N50K-E3MOSFET N-CH 500V 20A TO220AB |
3,412 | - |
|
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 250mOhm @ 12A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 2870 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
IRFP448PBFMOSFET N-CH 500V 11A TO247-3 |
2,060 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 600mOhm @ 6.6A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRFPE30PBFMOSFET N-CH 800V 4.1A TO247-3 |
3,743 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SI7812DN-T1-E3MOSFET N-CH 75V 16A PPAK1212-8 |
2,396 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 16A (Tc) | 4.5V, 10V | 37mOhm @ 7.2A, 10V | 3V @ 250µA | 24 nC @ 10 V | ±20V | 840 pF @ 35 V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHF28N60EF-GE3MOSFET N-CH 600V 28A TO220 |
2,459 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2714 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFBF30STRLPBFMOSFET N-CH 900V 3.6A TO263 |
341 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI7110DN-T1-GE3MOSFET N-CH 20V 13.5A PPAK1212-8 |
2,850 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 13.5A (Ta) | 4.5V, 10V | 5.3mOhm @ 21.1A, 10V | 2.5V @ 250µA | 21 nC @ 4.5 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI4866DY-T1-E3MOSFET N-CH 12V 11A 8SO |
2,179 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 11A (Ta) | 2.5V, 4.5V | 5.5mOhm @ 17A, 4.5V | 600mV @ 250µA (Min) | 30 nC @ 4.5 V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHF35N60EF-GE3MOSFET N-CH 600V 32A TO220 |
3,011 | - |
|
Техническая |
Bulk | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134 nC @ 10 V | ±30V | 2568 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHH125N60EF-T1GE3MOSFET N-CH 600V 23A PPAK 8 X 8 |
3,239 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 125mOhm @ 12A, 10V | 5V @ 250µA | 47 nC @ 10 V | ±30V | 1533 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHH28N60E-T1-GE3MOSFET N-CH 600V 29A PPAK 8 X 8 |
3,697 | - |
|
Техническая |
Bulk | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 98mOhm @ 14A, 10V | 5V @ 250µA | 129 nC @ 10 V | ±30V | 2614 pF @ 100 V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHF16N50C-E3MOSFET N-CH 500V 16A TO220 |
3,842 | - |
|
Техническая |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHP28N65EF-GE3MOSFET N-CH 650V 28A TO220AB |
3,728 | - |
|
Техническая |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 146 nC @ 10 V | ±30V | 3249 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHB24N65ET1-GE3MOSFET N-CH 650V 24A TO263 |
3,709 | - |
|
Техническая |
Tape & Reel (TR) | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHB24N65ET5-GE3MOSFET N-CH 650V 24A TO263 |
2,448 | - |
|
Техническая |
Tape & Reel (TR) | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI4488DY-T1-GE3MOSFET N-CH 150V 3.5A 8SO |
1,680 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 3.5A (Ta) | 10V | 50mOhm @ 5A, 10V | 2V @ 250µA (Min) | 36 nC @ 10 V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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|
SIHD14N60ET1-GE3N-CHANNEL 600V |
1,933 | - |
|
Техническая |
Tape & Reel (TR),Cut Tape (CT) | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±30V | 1205 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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