Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

Диодный выпрямитель

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SFA1005GHC0G

SFA1005GHC0G

DIODE GEN PURP 300V 10A TO220AC

Taiwan Semiconductor Corporation

3,963 -
SFA1005GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SS320 V7G

SS320 V7G

DIODE SCHOTTKY 3A 200V DO-214AB

Taiwan Semiconductor Corporation

1,622 -
SS320 V7G

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
SFA1006G C0G

SFA1006G C0G

DIODE GEN PURP 400V 10A TO220AC

Taiwan Semiconductor Corporation

3,079 -
SFA1006G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SFA1006GHC0G

SFA1006GHC0G

DIODE GEN PURP 400V 10A TO220AC

Taiwan Semiconductor Corporation

2,840 -
SFA1006GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SFA1007G C0G

SFA1007G C0G

DIODE GEN PURP 500V 10A TO220AC

Taiwan Semiconductor Corporation

2,242 -
SFA1007G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 10A -55°C ~ 150°C 1.7 V @ 10 A
SFA1007GHC0G

SFA1007GHC0G

DIODE GEN PURP 500V 10A TO220AC

Taiwan Semiconductor Corporation

3,038 -
SFA1007GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 10A -55°C ~ 150°C 1.7 V @ 10 A
SFA1008G C0G

SFA1008G C0G

DIODE GEN PURP 600V 10A TO220AC

Taiwan Semiconductor Corporation

3,537 -
SFA1008G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.7 V @ 10 A
SFA1008GHC0G

SFA1008GHC0G

DIODE GEN PURP 600V 10A TO220AC

Taiwan Semiconductor Corporation

3,871 -
SFA1008GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.7 V @ 10 A
SFA801G C0G

SFA801G C0G

DIODE GEN PURP 50V 8A TO220AC

Taiwan Semiconductor Corporation

3,705 -
SFA801G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA801GHC0G

SFA801GHC0G

DIODE GEN PURP 50V 8A TO220AC

Taiwan Semiconductor Corporation

3,565 -
SFA801GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA802G C0G

SFA802G C0G

DIODE GEN PURP 100V 8A TO220AC

Taiwan Semiconductor Corporation

2,391 -
SFA802G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 8A -55°C ~ 150°C 975 mV @ 8 A
S5K V7G

S5K V7G

DIODE GEN PURP 800V 5A DO214AB

Taiwan Semiconductor Corporation

1,440 -
S5K V7G

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 800 V 800 V 5A -55°C ~ 150°C 1.15 V @ 5 A
SS34 V7G

SS34 V7G

DIODE SCHOTTKY 3A 40V DO-214AB

Taiwan Semiconductor Corporation

1,660 -
SS34 V7G

Техническая

Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 40 V 40 V 3A -55°C ~ 125°C 500 mV @ 3 A
SS35 V7G

SS35 V7G

DIODE SCHOTTKY 3A 50V DO-214AB

Taiwan Semiconductor Corporation

1,653 -
SS35 V7G

Техническая

Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 50 V 50 V 3A -55°C ~ 150°C 750 mV @ 3 A
SFA802GHC0G

SFA802GHC0G

DIODE GEN PURP 100V 8A TO220AC

Taiwan Semiconductor Corporation

3,341 -
SFA802GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA803G C0G

SFA803G C0G

DIODE GEN PURP 150V 8A TO220AC

Taiwan Semiconductor Corporation

3,966 -
SFA803G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA803GHC0G

SFA803GHC0G

DIODE GEN PURP 150V 8A TO220AC

Taiwan Semiconductor Corporation

3,292 -
SFA803GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA804G C0G

SFA804G C0G

DIODE GEN PURP 200V 8A TO220AC

Taiwan Semiconductor Corporation

2,840 -
SFA804G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA804GHC0G

SFA804GHC0G

DIODE GEN PURP 200V 8A TO220AC

Taiwan Semiconductor Corporation

2,339 -
SFA804GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA805G C0G

SFA805G C0G

DIODE GEN PURP 300V 8A TO220AC

Taiwan Semiconductor Corporation

2,884 -
SFA805G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 8A -55°C ~ 150°C 1.3 V @ 8 A
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