Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

Диодный выпрямитель

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SFA805GHC0G

SFA805GHC0G

DIODE GEN PURP 300V 8A TO220AC

Taiwan Semiconductor Corporation

3,743 -
SFA805GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 8A -55°C ~ 150°C 1.3 V @ 8 A
SFA806G C0G

SFA806G C0G

DIODE GEN PURP 400V 8A TO220AC

Taiwan Semiconductor Corporation

3,170 -
SFA806G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 8A -55°C ~ 150°C 1.3 V @ 8 A
SFA806GHC0G

SFA806GHC0G

DIODE GEN PURP 400V 8A TO220AC

Taiwan Semiconductor Corporation

2,530 -
SFA806GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 8A -55°C ~ 150°C 1.3 V @ 8 A
SFA807G C0G

SFA807G C0G

DIODE GEN PURP 500V 8A TO220AC

Taiwan Semiconductor Corporation

3,550 -
SFA807G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 8A -55°C ~ 150°C 1.7 V @ 8 A
SFA807GHC0G

SFA807GHC0G

DIODE GEN PURP 500V 8A TO220AC

Taiwan Semiconductor Corporation

2,675 -
SFA807GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 8A -55°C ~ 150°C 1.7 V @ 8 A
SFA808GHC0G

SFA808GHC0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

2,875 -
SFA808GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 8A -55°C ~ 150°C 1.7 V @ 8 A
SFAF1001G C0G

SFAF1001G C0G

DIODE GEN PURP 50V 10A ITO220AC

Taiwan Semiconductor Corporation

2,549 -
SFAF1001G C0G

Техническая

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 975 mV @ 10 A
SFAF1001GHC0G

SFAF1001GHC0G

DIODE GEN PURP 50V 10A ITO220AC

Taiwan Semiconductor Corporation

2,549 -
SFAF1001GHC0G

Техническая

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 975 mV @ 10 A
UF1MHB0G

UF1MHB0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

2,751 -
UF1MHB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
S4J V7G

S4J V7G

DIODE GEN PURP 600V 4A DO214AB

Taiwan Semiconductor Corporation

1,428 -
S4J V7G

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 600 V 600 V 4A -55°C ~ 150°C 1.15 V @ 4 A
S4B V7G

S4B V7G

DIODE GEN PURP 100V 4A DO214AB

Taiwan Semiconductor Corporation

1,402 -
S4B V7G

Техническая

Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 4A -55°C ~ 150°C 1.15 V @ 4 A
S4M V7G

S4M V7G

DIODE GEN PURP 1KV 4A DO214AB

Taiwan Semiconductor Corporation

17,000 -
S4M V7G

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 1000 V 1000 V 4A -55°C ~ 150°C 1.15 V @ 4 A
UF4001 B0G

UF4001 B0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

3,264 -
UF4001 B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4001HB0G

UF4001HB0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

3,257 -
UF4001HB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4002 B0G

UF4002 B0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

3,990 -
UF4002 B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4002HB0G

UF4002HB0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

2,100 -
UF4002HB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4003 B0G

UF4003 B0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

3,986 -
UF4003 B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4003HB0G

UF4003HB0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

2,832 -
UF4003HB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4004 B0G

UF4004 B0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

3,942 -
UF4004 B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4004HB0G

UF4004HB0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

3,401 -
UF4004HB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
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