Shenzhen Yuecheng electronic Commerce Co., LTD+86 15815556552

Диодный выпрямитель

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Фото Производитель Часть # Доступность Цена Количество Техническая Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
UF4005 B0G

UF4005 B0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

3,136 -
UF4005 B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4005HB0G

UF4005HB0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

2,479 -
UF4005HB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4006 B0G

UF4006 B0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

2,987 -
UF4006 B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4006HB0G

UF4006HB0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

3,498 -
UF4006HB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4007 B0G

UF4007 B0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

2,156 -
UF4007 B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4007HB0G

UF4007HB0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

3,473 -
UF4007HB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
UG2D B0G

UG2D B0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

2,588 -
UG2D B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
UG2DHB0G

UG2DHB0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

3,915 -
UG2DHB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
UG54G B0G

UG54G B0G

DIODE GEN PURP 200V 5A DO201AD

Taiwan Semiconductor Corporation

2,543 -
UG54G B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 10 µA @ 200 V 200 V 5A -55°C ~ 175°C 1.05 V @ 5 A
HS3A V7G

HS3A V7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

1,614 -
HS3A V7G

Техническая

Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 1 V @ 3 A
S4K V7G

S4K V7G

DIODE GEN PURP 800V 4A DO214AB

Taiwan Semiconductor Corporation

1,565 -
S4K V7G

Техническая

Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 800 V 800 V 4A -55°C ~ 150°C 1.15 V @ 4 A
HS3G V7G

HS3G V7G

DIODE GEN PURP 400V 3A DO214AB

Taiwan Semiconductor Corporation

1,072 -
HS3G V7G

Техническая

Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.3 V @ 3 A
MUR320S V7G

MUR320S V7G

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation

1,700 -
MUR320S V7G

Техническая

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 200 V 200 V 3A -55°C ~ 175°C 875 mV @ 3 A
S5A V7G

S5A V7G

DIODE GEN PURP 50V 5A DO214AB

Taiwan Semiconductor Corporation

1,548 -
S5A V7G

Техническая

Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 5A -55°C ~ 150°C 1.15 V @ 5 A
S5B V7G

S5B V7G

DIODE GEN PURP 100V 5A DO214AB

Taiwan Semiconductor Corporation

1,210 -
S5B V7G

Техническая

Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 5A -55°C ~ 150°C 1.15 V @ 5 A
UG54GHB0G

UG54GHB0G

DIODE GEN PURP 200V 5A DO201AD

Taiwan Semiconductor Corporation

3,615 -
UG54GHB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 10 µA @ 200 V 200 V 5A -55°C ~ 175°C 1.05 V @ 5 A
UG56G B0G

UG56G B0G

DIODE GEN PURP 400V 5A DO201AD

Taiwan Semiconductor Corporation

3,801 -
UG56G B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 10 µA @ 400 V 400 V 5A -55°C ~ 175°C 1.55 V @ 5 A
UG56GHB0G

UG56GHB0G

DIODE GEN PURP 400V 5A DO201AD

Taiwan Semiconductor Corporation

3,684 -
UG56GHB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 10 µA @ 400 V 400 V 5A -55°C ~ 175°C 1.55 V @ 5 A
UG58G B0G

UG58G B0G

DIODE GEN PURP 600V 5A DO201AD

Taiwan Semiconductor Corporation

3,796 -
UG58G B0G

Техническая

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 30 µA @ 600 V 600 V 5A -55°C ~ 150°C 2.1 V @ 5 A
UG58GHB0G

UG58GHB0G

DIODE GEN PURP 600V 5A DO201AD

Taiwan Semiconductor Corporation

2,954 -
UG58GHB0G

Техническая

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 30 µA @ 600 V 600 V 5A -55°C ~ 150°C 2.1 V @ 5 A
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